Methods and material deposition systems for forming semiconductor layers

A method for forming oxide-based semiconductor layers, the method comprising:

• rotating a substrate around a center axis of a substrate deposition plane of the substrate;
• heating the substrate;
• and
• emitting materials from a plurality of material sources facing the substrate to form an oxide-based layer on the substrate, the plurality of material sources comprising a source of oxygen species and at least other two material sources, wherein each of the plurality of material sources has i) an exit aperture with an exit aperture plane and ii) a predetermined material ejection spatial distribution from the exit aperture plane, the material ejection spatial distribution having a symmetry axis which intersects the substrate at a point offset from the center axis, wherein the exit aperture is positioned at an orthogonal distance, a lateral distance, and a tilt angle relative to the center axis of the substrate;
• wherein the exit aperture is positioned such that either i) the orthogonal distance and the lateral distance are minimized for a set tilt angle, to achieve a desired layer deposition uniformity for a desired layer growth rate of the oxide-based layer on the substrate, or ii) the tilt angle is determined for a set orthogonal distance and a set lateral distance, to achieve the desired layer deposition uniformity for the desired layer growth rate of the oxide-based layer on the substrate.