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US 2025/0180766 A1Published application
Semiconductor Neutron Detectors
AssigneeTexas Tech University System
InventorsHongxing Jiang, Jing Li, Jingyu Lin, Attasit Tingsuwatit
Life of this patent
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Abstract
A neutron detector for detecting neutrons with energies from meV to tens of MeV comprising one or more nitride (BN) strips electrically connected in parallel or series. In some embodiments, the two or more BN strips are stacked on one another. In other embodiments, the two or more BN strips are disposed on a substrate with a gap between the two or more BN strips.
Claims35
A neutron detector comprising:
- two or more boron nitride (BN) strips electrically connected in parallel or series.
3-4. (canceled)
(canceled)
A method of fabricating a boron nitride (BN) layer comprising:
- depositing one or more buffer layers on a substrate;
- and
- growing the BN layer on the one or more buffer layers.
31-33. (canceled)
Dependencies are inferred from the claim text.