Apparatus and Method for Plasma Enhanced Chemical Vapour Deposition
AssigneeLeydenJar Technologies B.V.
InventorsPavel Kudlacek, Arjen Peter Didden
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Abstract
The present invention relates to a linear plasma source assembly for plasma enhanced chemical vapour deposition comprising: a) a linear plasma source with first end and a second end comprising an antenna and an co-axial shielding element; and b) at least two gas manifolds, each comprising: at least one first gas conduit(s) provided with at least one first gas outlet ports for providing one or more first gaseous substances to a chemical vapour deposition chamber; and at least one exhaust gas conduit(s) each provided with at least two exhaust gas inlet port(s) for removing one or more exhaust gaseous substances from a chemical vapour deposition chamber.
Claims20
A linear plasma source assembly for plasma enhanced chemical vapour deposition comprising:
- a linear plasma source with first end and a second end comprising an antenna and a co-axial shielding element;
- and
- at least two gas manifolds, each comprising
- at least one first gas conduit(s) provided with at least one first gas outlet port for providing one or more first gaseous substances to a chemical vapour deposition chamber;
- at least one exhaust gas conduit(s) each provided with at least two exhaust gas inlet port(s) for removing one or more exhaust gaseous substances from a chemical vapour deposition chamber.
Dependencies are inferred from the claim text.