Substrate polishing method

Abstract

The present invention relates to a substrate polishing method of polishing a substrate, such as a wafer. The substrate polishing method includes: rotating a substrate (W) about its own axis, while causing the substrate (W) and a polishing head (10C) to make a circular motion relative to each other; and pressing a polishing tape (2B) against a surface (5a) of the substrate (W) by the polishing head (10C) while feeding the polishing tape (2B) in a longitudinal direction thereof to thereby polish a central region including a center (O1) of the substrate (W) and an outer region adjacent to the central region. A process of polishing the central region and the outer region includes at least two polishing processes performed under different polishing conditions. The at least two polishing processes include: a low polishing-rate process performed under a polishing condition such that a polishing rate in the central region is lower than a polishing rate in the outer region; and a high polishing-rate process performed under a polishing condition such that a polishing rate in the central region is higher than a polishing rate in the outer region.

Dependencies are inferred from the claim text.