Micro led element, micro led display panel and display device
AssigneeJade Bird Display (Shanghai) Limited
InventorsWeisin TAN, Zhichen GU, Qunchao XU
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Abstract
A micro LED element includes a mesa including a first semiconductor layer, an intermediate layer, and a second semiconductor layer stacked from top down, wherein the mesa is divided into two stages at a side of the intermediate layer, and the intermediate layer includes: a light emitting layer; and a third semiconductor layer disposed on a surface of the light emitting layer, wherein the third semiconductor layer is exposed to the outside of the mesa to have an exposed surface relative to the mesa; and a Schottky metal layer disposed on the exposed surface, wherein the Schottky metal layer creates a depletion region in the light emitting layer.
Claims27
A micro LED element, comprising:
- a mesa comprising a first semiconductor layer, an intermediate layer, and a second semiconductor layer stacked from top down, wherein the mesa is divided into two stages at a side of the intermediate layer, the intermediate layer comprising:
- a light emitting layer;
- and
- a third semiconductor layer disposed on a surface of the light emitting layer, wherein the third semiconductor layer is exposed to an outside of the mesa to have an exposed surface relative to the mesa;
- and
- a Schottky metal layer disposed on the exposed surface, wherein the Schottky metal layer creates a depletion region in the light emitting layer.
A micro LED display panel, comprising:
- an integrated circuit (IC) backplane;
- and
- a plurality of micro LED elements, each of the plurality of micro LED elements comprising:
- a mesa comprising a first semiconductor layer, an intermediate layer, and a second semiconductor layer stacked from top down, wherein the mesa is divided into two stages at a side of the intermediate layer, the intermediate layer comprising:
- a light emitting layer;
- and
- a third semiconductor layer disposed on a surface of the light emitting layer, wherein the third semiconductor layer is exposed to an outside of the mesa to have an exposed surface relative to the mesa;
- and
- a Schottky metal layer disposed on the exposed surface, wherein the Schottky metal layer creates a depletion region in the light emitting layer,
- wherein each of the plurality of micro LED elements is disposed on a top surface of the IC backplane.
A micro LED display panel, comprising:
- an integrated circuit (IC) backplane;
- a plurality of micro LED elements disposed on a top surface of the IC backplane, wherein each of the plurality of micro LED elements comprises:
- a mesa comprising a first semiconductor layer, an intermediate layer, and a second semiconductor layer stacked from top down, wherein the mesa is divided into two stages at a side of intermediate layer, and the intermediate layer comprises:
- a light emitting layer;
- and
- a third semiconductor layer disposed on a surface of the light emitting layer, wherein the third semiconductor layer is exposed to an outside of the mesa to have an exposed surface relative to the mesa;
- a passivation layer formed on a sidewall surface of the mesa;
- and
- an insulating layer formed on the top surface of the IC backplane between each of the plurality of micro LED elements;
- and
- a Schottky metal layer disposed on the exposed surface, on the insulating layer, and a surface of the passivation layer of each of the plurality of micro LED elements, wherein the Schottky metal layer creates a depletion region in the light emitting layer of each of the plurality of micro LED elements.
A display device comprising a micro LED display panel, the micro LED display panel comprising:
- an integrated circuit (IC) backplane;
- and
- a plurality of micro LED elements each of the plurality of micro LED elements comprising:
- a mesa comprising a first semiconductor layer, an intermediate layer, and a second semiconductor layer stacked from top down, wherein the mesa is divided into two stages at a side of the intermediate layer, the intermediate layer comprising:
- a light emitting layer;
- and
- a third semiconductor layer disposed on a surface of the light emitting layer, wherein the third semiconductor layer is exposed to an outside of the mesa to have an exposed surface relative to the mesa;
- and
- a Schottky metal layer disposed on the exposed surface, wherein the Schottky metal layer creates a depletion region in the light emitting layer,
- wherein each of the plurality of micro LED elements is disposed on a top surface of the IC backplane.
Dependencies are inferred from the claim text.