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US 2025/0175128 A1Published application
Power amplifier
AssigneeMitsubishi Electric Corporation
InventorsKazuya YAMAMOTO, Satoshi SUZUKI, Katsuya KATO
Life of this patent
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Abstract
An amplifier (Trc,Trp) uses a GaN HEMT. A diode linearizer (LNZ) and a variable attenuator (VATT) are connected in series to an input of the amplifier (Trc, Trp). A peak detector (DET) detects a peak value of a drain voltage of the amplifier (Trc,Trp). A controller (CTL) makes the diode linearizer (LNZ) function as a linearizer to reduce an attenuation amount of the variable attenuator (VATT) if the peak value exceeds a threshold.
Claims8
A power amplifier comprising:
- an amplifier using a GaN HEMT;
- a diode linearizer and a variable attenuator which are connected in series to an input of the amplifier;
- a peak detector detecting a peak value of a drain voltage of the amplifier;
- and
- a controller making the diode linearizer function as a linearizer to reduce an attenuation amount of the variable attenuator if the peak value exceeds a threshold.
2 more elements
Dependencies are inferred from the claim text.