# US 2025/0169262 A1 · Solid state transducer devices with separately controlled regions, and associated systems and methods

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- Number: US 2025/0169262 A1
- Document ID: US20250169262A1
- Status: Published application
- Kind: A1
- Application number: 19/030,871
- Filed: 2025-01-17
- Published: 2025-05-22
- Earliest claimed: 2011-12-01
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Robert R. Rhodehouse
- Web page: https://patentgrep.com/patent/US20250169262A1

## CPC

- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10H 20/013: {having light-emitting regions comprising only Group III-V materials}
- H10H 20/0137: {the light-emitting regions comprising nitride materials}
- H10H 20/052: {Light-emitting semiconductor devices having Schottky type light-emitting regions; Light emitting semiconductor devices having Metal-Insulator-Semiconductor type light-emitting regions}
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/824: comprising only Group III-V materials, e.g. GaP
- H10H 20/8312: {extending at least partially through the bodies}
- H10H 20/831: characterised by their shape
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

## Claims

### Claim 1

A solid state transducer device, comprising:
a transducer structure including:
a first semiconductor material having a planar active surface;
a second semiconductor material;
a light-emitting active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region;
a first side; and
a second side facing away from the first side;
a first contact positioned on the planar active surface at the first side of the transducer structure and electrically connected to the first semiconductor material to direct a first electrical input to the first region;
a second contact positioned on the planar active surface at the first side of the transducer structure spaced apart from the first contact and electrically connected to the first semiconductor material to direct a second electrical input, distinct from the first electrical input, to the second region; and
a common third electrical contact electrically and physically connected to the second semiconductor material and electrically coupled to both the first and second regions.