# US 2025/0169232 A1 · Display device

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- Number: US 2025/0169232 A1
- Document ID: US20250169232A1
- Status: Published application
- Kind: A1
- Application number: 19/028,461
- Filed: 2025-01-17
- Published: 2025-05-22
- Earliest claimed: 2020-04-23
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Euijoon YOON; Jongmyeong KIM; Jehong OH; Seungmin LEE; Jungel RYU
- Web page: https://patentgrep.com/patent/US20250169232A1

## CPC

- H10H 20/818: within the light-emitting regions
- H10H 20/821: of the light-emitting regions, e.g. non-planar junctions
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10W 90/00: Package configurations
- H10H 20/036: {of packages}
- H10H 20/819: characterised by their shape, e.g. curved or truncated substrates
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A display device with improved light-emitting efficiency is disclosed. The display device includes a plurality of pixels, a light emitting device provided in each of the pixels, the light emitting device having first and second surfaces which are opposite to each other, first and second electrodes electrically and respectively connected to the first and second surfaces of the light emitting device, and a metal oxide pattern interposed between the second surface of the light emitting device and the second electrode. The metal oxide pattern includes first and second regions. The first region encloses the second region, and the second region has a contact hole exposing at least a portion of the second surface. The second electrode is coupled to the second surface through the contact hole, and the first and second regions have crystalline phases different from each other.

## Claims

### Claim 1

A method of manufacturing one or more light emitting devices, the method comprising:
forming sacrificial patterns on a substrate;
forming seed patterns by forming an inorganic layer over a surface of the substrate and surfaces of each of the sacrificial patterns;
forming contact holes in the seed patterns by etching the seed patterns;
forming a second region by crystallizing the seed patterns by performing a first thermal treatment process on the inorganic layer;
forming a first region, enclosing the second region, by further crystallizing at least a portion of each of the seed patterns by performing a second thermal treatment process on the inorganic layer; and
forming the one or more light emitting devices on one or more of the seed patterns,
wherein the first region and the second region have crystalline phases different from each other.

### Claim 2 (depends on 1)

The method of claim 1, wherein the inorganic layer comprises amorphous alumina.

### Claim 3 (depends on 2)

The method of claim 2, wherein the first region comprises a single crystalline α-phase, and
wherein the second region comprises a polycrystalline y-phase.

### Claim 4 (depends on 1)

The method of claim 1, wherein the forming the second region comprises crystallizing the inorganic layer into a polycrystalline y-phase by performing the first thermal treatment process at a first temperature.

### Claim 5 (depends on 4)

The method of claim 4, wherein the first temperature is in a range of 750° C. to 900° C.

### Claim 6 (depends on 4)

The method of claim 4, wherein the forming the first region comprises forming the first region into a single crystalline α-phase by propagating partial single crystallization from an interface adjacent to the substrate toward a center region of each seed pattern by performing the second thermal treatment process at a second temperature higher than the first temperature.

### Claim 7 (depends on 6)

The method of claim 6, wherein the second temperature is in a range of 1100° C. to 1200° C.

### Claim 8 (depends on 1)

The method of claim 1, wherein the forming the contact holes comprises:
forming an etch mask on the inorganic layer, the etch mask having openings through which center portions of the seed patterns are exposed, and
etching the exposed center portions of the seed patterns to define the contact holes.

### Claim 9 (depends on 1)

The method of claim 1, further comprising, after the forming the contact holes, removing the sacrificial patterns thereby leaving the seed patterns spaced apart from the substrate.

### Claim 10 (depends on 1)

The method of claim 1, wherein the forming the one or more light emitting devices on the seed patterns comprises forming a multi-layer structure by performing an epitaxial growth process of a group III-V compound semiconductor material, the multi-layer structure comprising at least a first semiconductor layer, an active layer, and a second semiconductor layer.

### Claim 11 (depends on 10)

The method of claim 10, wherein the group III-V compound semiconductor material comprises at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, and AlInN.

### Claim 12 (depends on 1)

The method of claim 1, further comprising separating the one or more light emitting devices from the substrate by performing a mechanical lift-off process.

### Claim 13 (depends on 12)

The method of claim 12, further comprising:
before the separating the one or more light emitting devices from the substrate, forming a connection pattern on a first side of each of the one or more light emitting devices; and
after the separating the one or more light emitting devices from the substrate, inverting each of the one or more light emitting devices such that the first side of each of the one or more light emitting devices faces downward.