# US 2025/0169129 A1 · Trench gate power mosfet and manufacturing method therefor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2025/0169129 A1 - Document ID: US20250169129A1 - Status: Published application - Kind: A1 - Application number: 18/869,453 - Filed: 2023-06-28 - Published: 2025-05-22 - Earliest claimed: 2022-07-27 - Assignees: InventChip Technology Co., Ltd. - Applicants: Inventchip Technology Co., Ltd. - Inventors: Yongxi Zhang; Wei Chen; Haitao Huang - Web page: https://patentgrep.com/patent/US20250169129A1 ## CPC - H10D 62/111: {Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures} - H10D 30/0297: {using recessing of the gate electrodes, e.g. to form trench gate electrodes} - H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors} - H10D 62/054: {by high energy implantations in bulk semiconductor bodies, e.g. forming pillars} - H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs} - H10D 62/157: {Impurity concentrations or distributions} - H10D 62/405: {Orientations of crystalline planes} - H10D 62/8325: {Silicon carbide} - H10P 30/2042: {into crystalline silicon carbide} - H10P 30/21: {of electrically active species} - H10P 30/221: {characterised by the angle between the ion beam and the mask} - H10P 30/222: {characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221)} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A trench gate power MOSFET, including: a substrate provided with a hexagonal wide bandgap semiconductor of a first conductivity type; an epitaxial layer grown on the substrate and of the first conductivity type; a body region formed on the epitaxial layer and of a second conductivity type; a trench formed in the body region by etching, where a length direction of the trench is parallel to a projection, on the surface of a wafer, of the C axis; a second conductivity-type pillar formed by implanting first ions into a bottom region of the trench along the C axis of the hexagonal wide bandgap semiconductor material, where the bottom region of the trench is located below the trench, and is connected to the bottom of the trench, and the longitudinal depth of the second conductivity-type pillar is at least not less than 50% of the thickness of the epitaxial layer located in the bottom region of the trench; and a trench gate formed by filling the trench with a filler. ## Claims ### Claim 1 A trench gate power MOSFET, wherein the trench gate power MOSFET is formed in a wafer, comprising: a substrate, wherein the substrate is a substrate of a hexagonal wide bandgap semiconductor material having a first conductivity type; an epitaxial layer, wherein the epitaxial layer is grown on the substrate and has the first conductivity type; a body region, wherein the body region is formed on the epitaxial layer and has a second conductivity type; a trench, wherein the trench is formed in the body region by etching, the length direction of the trench is parallel to a projection, on the surface of the wafer, of the C axis; a second conductivity-type pillar, wherein the second conductivity-type pillar is formed by implanting first ions into a bottom region of the trench along the C axis of the hexagonal wide bandgap semiconductor material, the bottom region of the trench is located below the trench, and is connected to the bottom of the trench, and the longitudinal depth of the second conductivity-type pillar is not less than 50% of the thickness of the epitaxial layer located in the bottom region of the trench; and a trench gate, wherein the trench gate is formed by filling the trench with a filler. ### Claim 2 (depends on 1) The trench gate power MOSFET according to claim 1, wherein a connector having the second conductivity type is further provided between the second conductivity-type pillar and the body region, one end of the connector is electrically connected to the body region, and the other end of the connector is electrically connected to the second conductivity-type pillar. ### Claim 3 (depends on 1) The trench gate power MOSFET according to claim 1, further comprising: a drain located below the substrate, a gate located on the central axis of the body region, and a source located on both sides of the gate. ### Claim 4 (depends on 1) The trench gate power MOSFET according to claim 1, wherein the epitaxial layer is a single epitaxial layer. ### Claim 5 (depends on 1) The trench gate power MOSFET according to claim 1, wherein the epitaxial layer comprises a first epitaxial layer and a second epitaxial layer, and the first epitaxial layer is located below the second epitaxial layer; the thickness of the first epitaxial layer is less than the thickness of the second epitaxial layer; the doping concentration of the first epitaxial layer is less than the doping concentration of the second epitaxial layer; the bottom of the trench and the second conductivity-type pillar are located in the second epitaxial layer, and the longitudinal depth of the second conductivity-type pillar is not less than 50% of the thickness of the second epitaxial layer located in the bottom region of the trench. ### Claim 6 (depends on 4) The trench gate power MOSFET according to claim 4, wherein the hexagonal wide bandgap semiconductor material is silicon carbide. ### Claim 7 (depends on 1) The trench gate power MOSFET according to claim 1, wherein the ratio of the depth of the trench to the width of the trench ranges from 1:1 to 5:1. ### Claim 8 (depends on 6) The trench gate power MOSFET according to claim 6, wherein the first ions comprise aluminum ions, and the first ions are implanted at least twice, that is, implanted into the bottom region of the trench along the C-axis direction of the silicon carbide crystal with a first dose and a first energy, and a second dose and a second energy. ### Claim 9 A method for manufacturing a trench gate power MOSFET, wherein the trench gate power MOSFET is generated in a wafer, comprising: growing an epitaxial layer having a first conductivity type on a hexagonal wide bandgap semiconductor material substrate; forming a body region having a second conductivity type on the epitaxial layer; forming a trench in the body region by etching, wherein the length direction of the trench is parallel to a projection, on the surface of the wafer, of the C axis; implanting first ions into a bottom region of the trench along the the C axis of the hexagonal wide bandgap semiconductor material to form a second conductivity-type pillar, wherein the bottom region of the trench is located below the trench, and is connected to the bottom of the trench, and the longitudinal depth of the second conductivity-type pillar is not less than 50% of the thickness of the epitaxial layer located in the bottom region of the trench; and filling the trench with a filler to fill the trench. ### Claim 10 (depends on 9) The manufacturing method according to claim 9, further comprising: implanting first ions into the body region and the epitaxial layer to form a connector having the second conductivity type, one end of the connector is electrically connected to the body region, the other end of the connector is electrically connected to the second conductivity-type pillar, and the depth of the connector is greater than or equal to the depth of the trench. ### Claim 11 (depends on 9) The manufacturing method according to claim 9, wherein the hexagonal wide bandgap semiconductor material is silicon carbide. ### Claim 12 (depends on 11) The manufacturing method according to claim 11, wherein the step of implanting the first ion into the bottom region of the trench along the C axis comprises: implanting the first ion at least twice, that is, implanting the first ion into the bottom region of the trench along the C axis direction of the silicon carbide crystal with a first dose and a first energy and a second dose and a second energy respectively. ### Claim 13 (depends on 12) The manufacturing method according to claim 12, wherein the first dose is 5E13 to 5E14 atoms per square centimeter, and the first energy is 500 kev to 1500 kev; the second dose is 5E12 to 5E13 atoms per square centimeter, and the second energy is 50 kev to 300 kev. ### Claim 14 (depends on 9) The manufacturing method according to claim 9, wherein the epitaxial layer comprises a first epitaxial layer and a second epitaxial layer, wherein the first epitaxial layer having the first conductivity type is grown on the hexagonal wide bandgap semiconductor material substrate, and the second epitaxial layer having the first conductivity type is grown on the first epitaxial layer. ### Claim 15 (depends on 14) The manufacturing method according to claim 14, wherein the thickness of the first epitaxial layer is less than the thickness of the second epitaxial layer; the doping concentration of the first epitaxial layer is less than the doping concentration of the second epitaxial layer. ### Claim 16 (depends on 14) The manufacturing method according to claim 14, wherein the bottom of the trench and the second conductivity-type pillar are located in the second epitaxial layer, and the longitudinal depth of the second conductivity-type pillar is not less than 50% of the thickness of the second epitaxial layer located in the bottom region of the trench. ### Claim 17 (depends on 9) The manufacturing method according to claim 9, wherein the ratio of the depth of the trench to the width of the trench ranges from 1:1 to 5:1.