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US 2025/0167005 A1Published application
Method for manufacturing a substrate wafer for building group iii-v devices thereon and a substrate wafer for building group iii-v devices thereon
AssigneeSiltronic AG
InventorsBrian MURPHY, Sarad Bahadur THAPA
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Abstract
A substrate wafer for building group III-V devices thereon is manufactured by a method that includes: providing a silicon single crystal wafer; forming a gettering region below a top surface of the silicon single crystal wafer; and forming a nitrogen enriched passivation layer representing a top portion of the substrate wafer.
Claims13
A method for manufacturing a substrate wafer for building group III-V devices thereon, the method comprising:
- providing a silicon single crystal wafer;
- forming a gettering region below a top surface of the silicon single crystal wafer;
- and
- forming a nitrogen enriched passivation layer representing a top portion of the substrate wafer.
1 more element
A substrate wafer for building group III-V devices, the substrate wafer comprising:
- a silicon single crystal wafer;
- a gettering region below the top surface of the silicon single crystal wafer;
- and
- a nitrogen enriched passivation layer.
1 more element
Dependencies are inferred from the claim text.