Lithography compositions and methods for forming resist patterns and/or making semiconductor devices

A multinuclear lithographic composition, represented by the below formula,

• [MaNbOcHdBeRfXg(WCOR′)h(OR″)i(WCOCOY)j(COY)k]l,
• wherein the composition contains at least one of R, R′ and R″, and at least one of R, R′ and R″ includes an alkyne functional group moiety:
• R, when present, is independently an aromatic or aliphatic hydrocarbon selected from:
• —C6H5, —CH3, —CH2CH3, —CH(CH3)2, —C(CH3)3, —CH═CH2, —C(CH3)═CH2, —CH2CH═CH2, —CH2C≡CH, —CH2C≡N, —CH2C6H5, —C6H4CH═CH2, —C6H4C(CH3)═CH2, —CH2C6H4CH═CH2, —C6H4OCH3, p-C6H4OCH3, —C6H4CH2CH3, —CH2C6H4OCH3, —C6H11, —C≡CH, —CH2C6H4C≡CH, —(CO)C6H4C≡CH, —C≡CR′″, —CH2C6H4C≡CR′″, —(CO)C6H4C≡CR′″, or —C6H4C≡CR′″-o-C6H4OCH3, -m-C6H4OCH3, -o-CH2C6H4OCH3, -m-CH2C6H4OCH3, -p-CH2C6H4OCH3, -o-CH2C6H4C≡CH, -m-CH2C6H4C≡CH, -p-CH2C6H4C≡CH, —(CO)C6H4C≡CH, -o-C6H4C≡CH, -m-C6H4C≡CH, -p-C6H4C≡CH;
• R′, when present, is independently an element comprising oxygen, nitrogen, fluorine, chlorine, bromine, or iodine, an aromatic hydrocarbon, or an aliphatic hydrocarbon selected from:
• —H, —CH3, —CH2CH3, —CH(CH3)2, —C(CH3)3, —C6H5, —CH═CH2, —C(CH3)═CH2, —CH2CH═CH2, —CH2C≡CH, —CH2C≡N, —CH2C6H5, —C6H4CH═CH2, —C6H4C(CH3)═CH2, —CH2CH2F, —CH2CH2Cl, —CH2CH2Br, —CH2CH2I, —CH2CH2OCH3, —CH2CH2CN, —CHF(CH3), —CHCl(CH3), —CHBr(CH3), —CHI(CH3), —CH(OCH3)(CH3), —CHCN(CH3), —CH2F, —CH2Cl, —CH2Br, —CH2I, —CH2OCH3, —CH2CN, —OCH3, —OCH2CH3, —OC(CH3)3, —C6H4OCH3, —C6H4Cl, —C≡CH, —C6H4C≡CH, —CH2C6H4C≡CH, —C≡CR′″, —C6H4C≡CR′″, or —CH2C6H4C≡CR′″, -o-C6H4C≡CH, -m-C6H4C≡CH, -p-C6H4C≡CH, -o-CH2C6H4C≡CH, -m-CH2C6H4C≡CH, -p-CH2C6H4C≡CH;
• R″, when present, is each independently an element, an aromatic hydrocarbon, or an aliphatic hydrocarbon selected from:
• —H, —CH3, —CH2CH3, —CH(CH3)2, —C(CH3)3, —C6H5, —CH═CH2, —C(CH3)═CH2, —CH2CH═CH2, —CH2C≡CH, —CH2C≡N, —CH2C6H5, —C6H4CH═CH2, —C6H4C(CH3)═CH2, —C6H4C≡CH, —CH2C6H4C≡CH, —C6H4C≡CR′″, or —CH2C6H4C≡CR′″;
• R′″, when present, is independently an aromatic or aliphatic hydrocarbon selected from:
• —CH3, —CH2CH3, or —C6H5;
• M is each independently an element selected from the group of tellurium (Te), antimony (Sb), tin (Sn), iodine (I), bismuth (Bi) and indium (In);
• N, when present, is each independently an element selected from the group consisting of indium (In), tin (Sn), antimony (Sb), tellurium (Te), bismuth (Bi) and iodine (I);
• H, when present, is each independently hydrogen;
• O is each independently oxygen;
• B, when present, is each independently selected from W, C2O4, SO4, PO4, (CH2)2C6H2(CH2)2, —C≡C—, —CH2C≡C—, —CH2C≡CCH2—, or —CH2C6H4CH2—, —O—O—, —O2CCH2CH2CO2—, —O2CCH═CHCO2—, —O2CC≡CCO2—, —(OCO)2NCH2CH2N(COO)2—,
• X, when present, is each independently selected from F, Cl, Br, CN, I or C2O4, an alkyne functional group moiety, —O2CC≡CH, —O2CC6H4C≡CH, or —O2CCH2C6H4C≡CH;
• W, when present, is each independently an element or a compound selected from the group consisting of —CH2, NR′, S, and O;
• Y when present, is each independently an element or compound selected from the group consisting of —WR′, and —R′, wherein
• a=1-8;
• b=0-5;
• c=0-20;
• d=0-20;
• e=0-10;
• f=0-20;
• g=0-20;
• h=0-5;
• i=0-5;
• j=0-5;
• k=0-6;
• and I=charge on an ion or a complex selected from:
• −4, −3, −2, −1, 0, +1, +2, +3, +4.