Solid-state imaging element

A solid-state imaging element comprising:

• a semiconductor substrate;
• a first element unit formed on the semiconductor substrate;
• and
• a second element unit formed on the semiconductor substrate, wherein
• the first element unit includes a light receiving part configured to generate charges in response to incidence of light, and a transfer part configured to transfer the charges,
• the second element unit is configured to perform at least one of transmission of a signal to the first element unit and reception of a signal from the first element unit,
• the transfer part includes
• a first transfer electrode and a second transfer electrode that are disposed over a charge transfer region of the semiconductor substrate, and are aligned in a transfer direction of the charges, and
• a discharge gate electrode that is disposed over a charge discharge region of the semiconductor substrate along the charge transfer region,
• the first transfer electrode is formed as a first layer,
• the second transfer electrode and the discharge gate electrode are formed as second layers different from the first layer,
• as viewed from a thickness direction of the semiconductor substrate, the first transfer electrode includes a portion overlapping a part of the second transfer electrode and a portion overlapping a part of the discharge gate electrode, and
• as viewed from the thickness direction of the semiconductor substrate, the second transfer electrode is spaced apart from the discharge gate electrode.