Back to results
US 2025/0160015 A1Published application
Solid-state imaging device and method of manufacturing solid-state imaging device
AssigneeSony Semiconductor Solutions Corporation
InventorMasahiro JOEI
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device includes: an oxide semiconductor layer disposed above a substrate; a photoelectric conversion layer stacked on the oxide semiconductor layer on an opposite side of the substrate; and an insulating separator disposed in the oxide semiconductor layer between pixels, in which the insulation separator includes an insulator.
Claims16
A solid-state imaging device comprising:
- an oxide semiconductor layer disposed above a substrate;
- a photoelectric conversion layer stacked on the oxide semiconductor layer on an opposite side of the substrate;
- and
- an insulating separator disposed in the oxide semiconductor layer between pixels, the insulation separator including an insulator.
1 more element
A method of manufacturing a solid-state imaging device, the method comprising:
- forming an oxide semiconductor layer above a substrate;
- forming a separation groove between regions where pixels are to be formed, the separation groove being formed in a thickness direction of the oxide semiconductor layer from a surface of the oxide semiconductor layer on an opposite side of the substrate;
- forming an insulating separator by embedding an insulating film in the separation groove;
- and
- forming a photoelectric conversion layer on the surface.
2 more elements
Dependencies are inferred from the claim text.