US 2025/0159937 A1Published application

Semiconductor film

AssigneeNGK Insulators, Ltd.

InventorsMorimichi WATANABE, Hiroshi FUKUI

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Abstract

Provided is a semiconductor film having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution, and an X-ray rocking curve full width at half maximum of a (104) plane on at least one surface of the semiconductor film is 500 arcsec or less.

Claims7

Dependent claims

A semiconductor film having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution, wherein an X-ray rocking curve full width at half maximum of a (104) plane on at least one surface of the semiconductor film is 500 arcsec or less.

Dependencies are inferred from the claim text.

Facts

Application: 19/019,799Filed 14 Jan 2025
Priority: WO PCT/JP2019/01751624 Apr 2019
Published: 15 May 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

C23C 16/4486
Characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials: by producing an…
H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
C23C 16/029
Deposition of sub-layers, e.g. to promote the adhesion of the main coating: graded interfaces
C23C 16/40
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides: oxides

Family

Application17/450,706Continuation · filed 13 Oct 2021
Application19/019,799Continuation
US 12,751,049 B2Related patent
US 2022/0029022 A1Published application
US 2025/0159937 A1This patent

From the US filing history. Foreign family members aren’t listed.

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