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US 2025/0157809 A1Published application
Thin-film forming composition including aluminum compound, method of forming thin film by using the thin-film forming composition, and method of manufacturing semiconductor device
AssigneesSamsung Electronics Co., Ltd., Dnf Co., Ltd.
InventorsDaeun Kim, Seung-Min Ryu, Gyu-Hee Park, Joongjin Park, Sangick Lee, Sanghun Lee, Seunghyeon Lee, Sejin Jang, Youn Joung Cho
Life of this patent
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Abstract
A thin-film forming composition includes an aluminum compound represented by General Formula (1). In General Formula (1), X1, X2, and X3 are each independently a halogen atom, R1 and R2 are each independently a C1-C5 alkyl group, and Y1 is a chalcogen atom.
Claims20
A thin-film forming composition comprising an aluminum compound represented by General Formula (1):
- General Formula (1)
- wherein, in General Formula (1), X1, X2, and X3 are each independently a halogen atom, R1 and R2 are each independently a C1-C5 alkyl group, and Y1 is a chalcogen atom.
A method of forming a thin film, the method comprising:
- forming an aluminum-containing film on a substrate by using a thin-film forming composition that comprises an aluminum compound represented by General Formula (1):
- General Formula (1)
- wherein, in General Formula (1), X1, X2, and X3 are each independently a halogen atom, R1 and R2 are each independently a C1-C5 alkyl group, and Y1 is a chalcogen atom.
A method of manufacturing a semiconductor device, the method comprising:
- forming a lower structure on a substrate;
- and
- forming an aluminum-containing film on the lower structure by using a thin-film forming composition that comprises an aluminum compound represented by General Formula (1):
- General Formula (1)
- wherein, in General Formula (1), X1, X2, and X3 are each independently a halogen atom, R1 and R2 are each independently a C1-C5 alkyl group, and Y1 is a chalcogen atom.
2 more elements
Dependencies are inferred from the claim text.