# US 2025/0157797 A1 · Placing table and substrate processing apparatus

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- Number: US 2025/0157797 A1
- Document ID: US20250157797A1
- Status: Published application
- Kind: A1
- Application number: 19/023,579
- Filed: 2025-01-16
- Published: 2025-05-15
- Earliest claimed: 2019-08-09
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Katsuyuki KOIZUMI; Masanori TAKAHASHI; Shota EZAKI
- Web page: https://patentgrep.com/patent/US20250157797A1

## CPC

- H01J 37/32724: {Temperature}
- F28D 7/00: Heat-exchange apparatus having stationary tubular conduit assemblies for both heat-exchange media, the media being in contact with different sides of a conduit wall
- H01J 37/32642: {Focus rings}
- H10P 72/7624: {characterised by the mechanical construction of the susceptor, stage or support}
- F28F 3/12: Elements constructed in the shape of a hollow panel, e.g. with channels {(F28D1/02, F28D1/03 take precedence)}
- H10P 72/722: {Details of electrostatic chucks}
- H10P 72/7606: {characterised by edge clamping, e.g. clamping ring}
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- F28D: HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT (fluid heaters having heat generating means and heat transferring means F24H; furnaces F27; details of heat-exchange apparatus of general)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- F28F: DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION (water and air traps, air venting F16)

## Abstract

A placing table includes a first surface located at an outer side than a substrate; and a second surface on which the substrate is placed. A first path is formed to correspond to the first surface.

## Claims

### Claim 1

A placing table comprising a first surface located at an outer side than a substrate; and a second surface on which the substrate is placed,
wherein a first path is formed to correspond to the first surface.

### Claim 2 (depends on 1)

The placing table of claim 1,
wherein when a vertical distance between the first surface and the first path is h and a horizontal distance from a boundary between the first surface and the second surface to the first path is d, d is larger than h (d>h).

### Claim 3 (depends on 1)

The placing table of claim 1,
wherein a second path is formed to correspond to the second surface, and
when a width of the second path in a horizontal direction is w1 and a width of the first path in the horizontal direction is w2, w1 is larger than w2 (w1>w2).

### Claim 4 (depends on 3)

The placing table of claim 3,
wherein when a horizontal distance from the first path to the second path is d′, d′ is larger than d (d′>d).

### Claim 5 (depends on 3)

The placing table of claim 3,
wherein the first path and the second path are connected to a chiller unit, which is allowed to supply a heat exchange medium into the first path and the second path, in parallel.

### Claim 6 (depends on 3)

The placing table of claim 3,
wherein the first path and the second path are connected to a chiller unit, which is allowed to supply a heat exchange medium into the first path and the second path, in series.

### Claim 7 (depends on 1)

The placing table of claim 1,
wherein a ring member is placed on the first surface to surround the substrate.

### Claim 8 (depends on 7)

The placing table of claim 7,
wherein the first surface is an outer top surface of an electrostatic chuck, configured to attract the ring member.

### Claim 9 (depends on 8)

The placing table of claim 8,
wherein the second surface is an inner top surface of the electrostatic chuck, configured to attract the substrate.

### Claim 10 (depends on 8)

The placing table of claim 8,
wherein the electrostatic chuck comprises a first heater which is disposed between the first surface and the first path and configured to control a temperature of the ring member.

### Claim 11 (depends on 8)

The placing table of claim 8,
wherein the electrostatic chuck comprises a second heater which is disposed in parallel with the second surface and configured to control a temperature of the substrate.

### Claim 12 (depends on 1)

The placing table of claim 1,
wherein the first path is formed at an outer side than an edge of the substrate.

### Claim 13

A substrate processing apparatus comprising a chamber configured to perform a plasma processing or a heat treatment therein; and a placing table configured to place a substrate on an electrostatic chuck within the chamber,
wherein the placing table comprises:
a first surface located at an outer side than the substrate; and
a second surface on which the substrate is placed,
wherein a first path is formed to correspond to the first surface.

### Claim 14 (depends on 13)

The substrate processing apparatus of claim 13,
wherein when a vertical distance between the first surface and the first path is h and a horizontal distance from a boundary between the first surface and the second surface to the first path is d, d is larger than h (d>h).

### Claim 15 (depends on 13)

The substrate processing apparatus of claim 13, further comprising:
a chiller unit,
wherein a second path is formed to correspond to the second surface, and
the chiller unit is configured to supply a heat exchange medium into the first path and the second path.