# US 2025/0157732 A1 · Multilayer ceramic capacitor and manufacturing method thereof

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- Number: US 2025/0157732 A1
- Document ID: US20250157732A1
- Status: Published application
- Kind: A1
- Application number: 18/743,928
- Filed: 2024-06-14
- Published: 2025-05-15
- Earliest claimed: 2023-11-14
- Assignees: Samsung Electro-Mechanics Co., Ltd.
- Applicants: Samsung Electro-Mechanics Co., Ltd.
- Inventors: Heesun Chun; Minhee Kim; Gil Seong Kang; Sun-Min Jung; Yongjun Gong; Ji Young Lee; Kimyoung Yun
- Web page: https://patentgrep.com/patent/US20250157732A1

## CPC

- H01G 4/1227: {based on alkaline earth titanates}
- H01G 4/012: Form of non-self-supporting electrodes
- H01G 4/30: Stacked capacitors (H01G4/33 takes precedence)
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)

## Abstract

A multilayer ceramic capacitor may include a capacitor body including a dielectric layer and an internal electrode layer, and an external electrode disposed outside the capacitor body, where the dielectric layer may include a plurality of dielectric grains and a grain boundary located between the dielectric grains adjacent to each other, where the dielectric grain may include a barium titanate-based main component including barium (Ba) and titanium (Ti), where the grain boundary includes silicon (Si), dysprosium (Dy), and terbium (Tb), and where silicon (Si), dysprosium (Dy), and terbium (Tb) are included in the grain boundary in content order of terbium (Tb)<dysprosium (Dy)<silicon (Si).

## Claims

### Claim 1

A multilayer ceramic capacitor, comprising:
a capacitor body comprising a dielectric layer and an internal electrode layer; and
an external electrode disposed outside the capacitor body,
wherein the dielectric layer comprises a plurality of dielectric grains and a grain boundary located between dielectric grains adjacent to each other,
wherein the plurality of dielectric grains comprises a barium titanate-based main component including barium (Ba) and titanium (Ti),
wherein the grain boundary includes silicon (Si), dysprosium (Dy), and terbium (Tb), and
wherein a content of each of silicon (Si), dysprosium (Dy), and terbium (Tb) included in the grain boundary is in order of terbium (Tb)<dysprosium (Dy)<silicon (Si).

### Claim 2 (depends on 1)

The multilayer ceramic capacitor of claim 1, wherein a sum of the contents of dysprosium (Dy) and terbium (Tb) is greater than 0.9 parts by mole to less than 2.0 parts by mole based on 100 parts by mole of titanium (Ti).

### Claim 3 (depends on 1)

The multilayer ceramic capacitor of claim 1, wherein silicon (Si) is included in an amount of 1.3 parts by mole to 2.5 parts by mole based on 100 parts by mole of titanium (Ti).

### Claim 4 (depends on 1)

The multilayer ceramic capacitor of claim 1, wherein dysprosium (Dy) is included in an amount of 0.6 parts by mole to 1.6 parts by mole based on 100 parts by mole of titanium (Ti).

### Claim 5 (depends on 1)

The multilayer ceramic capacitor of claim 1, wherein terbium (Tb) is included in an amount of 0.1 parts by mole to 0.5 parts by mole based on 100 parts by mole of titanium (Ti).

### Claim 6 (depends on 1)

The multilayer ceramic capacitor of claim 1, wherein a mole ratio of terbium (Tb) to dysprosium (Dy) is 0.3 to 0.8.

### Claim 7 (depends on 1)

The multilayer ceramic capacitor of claim 1, wherein an atomic ratio of dysprosium (Dy) to silicon (Si) is greater than 0.4 to less than 1.0.

### Claim 8 (depends on 1)

The multilayer ceramic capacitor of claim 1, wherein an atomic ratio of terbium (Tb) to silicon (Si) is greater than 0.4 to less than 1.0.

### Claim 9 (depends on 1)

The multilayer ceramic capacitor of claim 1, wherein the grain boundary further comprises tin (Sn).

### Claim 10 (depends on 9)

The multilayer ceramic capacitor of claim 9, wherein tin (Sn) is included in an amount of 0.5 parts by mole to 2.5 parts by mole based on 100 parts by mole of titanium (Ti).

### Claim 11 (depends on 1)

The multilayer ceramic capacitor of claim 1, wherein a dielectric grain among the plurality of dielectric grains has a diameter of 60% to 90% of a sum of a diameter of the dielectric grain and a thickness of the grain boundary.

### Claim 12 (depends on 1)

The multilayer ceramic capacitor of claim 1, wherein a diameter of a dielectric grain among the plurality of dielectric grains is 80 nm to 120 nm.

### Claim 13 (depends on 1)

The multilayer ceramic capacitor of claim 1, wherein a size D50 of the plurality of dielectric grains is 300 nm or less.

### Claim 14 (depends on 1)

The multilayer ceramic capacitor of claim 1, wherein a thickness of the grain boundary is 10 nm to 100 nm.

### Claim 15 (depends on 1)

The multilayer ceramic capacitor of claim 1, wherein an average thickness of the dielectric layer is 0.3 μm to 0.6 μm.

### Claim 16 (depends on 1)

The multilayer ceramic capacitor of claim 1, wherein silicon (Si) is included in an amount of 1.3 parts by mole to 2.5 parts by mole based on 100 parts by mole of titanium (Ti), dysprosium (Dy) is included in an amount of 0.6 parts by mole to 1.6 parts by mole based on 100 parts by mole of titanium (Ti), and terbium (Tb) is included in an amount of 0.1 parts by mole to 0.5 parts by mole based on 100 parts by mole of titanium (Ti).

### Claim 17

A manufacturing method of a multilayer ceramic capacitor, the manufacturing method comprising:
preparing a dielectric slurry by mixing barium titanate-based main component powder, and secondary component powder including silicon (Si)-containing compound, dysprosium (Dy)-containing compound, and terbium (Tb)-containing compound;
preparing a dielectric green sheet by utilizing the dielectric slurry, and forming a conductive paste layer on a surface of the dielectric green sheet;
manufacturing a dielectric green sheet laminate by stacking a plurality of the dielectric green sheets on which the conductive paste layer is formed;
manufacturing a capacitor body including a plurality of dielectric layers and a plurality of internal electrode layers by firing the dielectric green sheet laminate; and
forming an external electrode on a first surface of the capacitor body,
wherein the dielectric layer comprises a plurality of dielectric grains and a grain boundary located between dielectric grains adjacent to each other,
wherein the plurality of dielectric grains comprises a barium titanate-based main component including barium (Ba) and titanium (Ti),
wherein the grain boundary includes silicon (Si), dysprosium (Dy), and terbium (Tb), and
wherein a content of each of silicon (Si), dysprosium (Dy), and terbium (Tb) included in the grain boundary is in order of terbium (Tb)<dysprosium (Dy)<silicon (Si).

### Claim 18 (depends on 17)

The manufacturing method of claim 17, wherein the barium titanate-based main component powder is prepared by mixing titanium (Ti) precursor and barium (Ba) precursor, and
wherein, based on 100 parts by mole of the titanium (Ti) precursor:
the silicon (Si)-containing compound is included in an amount of 1.3 parts by mole to 2.5 parts by mole;
the dysprosium (Dy)-containing compound is included in an amount of 0.6 parts by mole to 1.6 parts by mole; and
the terbium (Tb)-containing compound is included in an amount of 0.1 parts by mole to 0.5 parts by mole.

### Claim 19 (depends on 17)

The manufacturing method of claim 17, wherein the secondary component powder further comprises a fourth compound including tin (Sn).

### Claim 20 (depends on 19)

The manufacturing method of claim 19, wherein:
the barium titanate-based main component powder is prepared by mixing titanium (Ti) precursor and barium (Ba) precursor; and
the fourth compound is included in an amount of 0.5 parts by mole to 2.5 parts by mole based on 100 parts by mole of the titanium (Ti) precursor.