# US 2025/0157516 A1 · Magnetic memory device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2025/0157516 A1 - Document ID: US20250157516A1 - Status: Published application - Kind: A1 - Application number: 18/925,376 - Filed: 2024-10-24 - Published: 2025-05-15 - Earliest claimed: 2023-11-09 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Yongjae Lee; Kilho Lee; Ung Hwan Pi - Web page: https://patentgrep.com/patent/US20250157516A1 ## CPC - G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell} - G11C 19/0808: {using magnetic domain propagation} - H10B 61/00: Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices - H10N 50/10: Magnetoresistive devices - H10N 50/85: Materials of the active region - G11C: STATIC STORES (semiconductor memory devices H10B) - H10B: ELECTRONIC MEMORY DEVICES - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR ## Abstract A magnetic memory device comprising a substrate, a first dielectric pattern on the substrate, a dielectric pillar including a penetration part that penetrates the first dielectric pattern and a protrusion part that protrudes above a top surface of the first dielectric pattern, a first magnetic pattern between the first dielectric pattern and the dielectric pillar and including a first part that surrounds a lateral surface of the penetration part and a second part that surrounds a lateral surface of the protrusion part, a second magnetic pattern on the first dielectric pattern and surrounding a lateral surface of the second part, and a tunnel barrier pattern on the first dielectric pattern and between the second part and the second magnetic pattern. The first magnetic pattern extends in a third direction perpendicular to a top surface of the substrate. ## Claims ### Claim 1 A magnetic memory device, comprising: a substrate; a first dielectric pattern on the substrate; a dielectric pillar including a penetration part that penetrates the first dielectric pattern and a protrusion part that protrudes above a top surface of the first dielectric pattern; a first magnetic pattern between the first dielectric pattern and the dielectric pillar, the first magnetic pattern including a first part that surrounds a lateral surface of the penetration part and a second part that surrounds a lateral surface of the protrusion part; a second magnetic pattern on the first dielectric pattern, the second magnetic pattern surrounding a lateral surface of the second part; and a tunnel barrier pattern on the first dielectric pattern and between the second part and the second magnetic pattern, wherein the first magnetic pattern extends along a vertical direction that is perpendicular to a top surface of the substrate. ### Claim 2 (depends on 1) The magnetic memory device of claim 1, wherein the first magnetic pattern includes a plurality of magnetic domains arranged in the vertical direction, and wherein the second magnetic pattern has a magnetization direction that is fixed in one direction. ### Claim 3 (depends on 1) The magnetic memory device of claim 1, further comprising an etch stop layer between the first dielectric pattern and a bottom surface of the tunnel barrier pattern, wherein the etch stop layer extends onto the top surface of the first dielectric pattern and contacts an outer sidewall of the first magnetic pattern. ### Claim 4 (depends on 1) The magnetic memory device of claim 1, wherein the second magnetic pattern includes: a vertical part that extends along the vertical direction; and a horizontal part that protrudes along a horizontal direction from a lower portion of the vertical part, the horizontal direction away from the dielectric pillar. ### Claim 5 (depends on 4) The magnetic memory device of claim 4, wherein the tunnel barrier pattern includes: a vertical part that extends along the vertical direction; and a horizontal part that protrudes along the horizontal direction from a lower portion of the vertical part of the tunnel barrier pattern, wherein the vertical part of the tunnel barrier pattern is between the dielectric pillar and the vertical part of the second magnetic pattern, and wherein the horizontal part of the tunnel barrier pattern is between the first dielectric pattern and the horizontal part of the second magnetic pattern. ### Claim 6 (depends on 5) The magnetic memory device of claim 5, wherein a lateral surface of the horizontal part of the second magnetic pattern is aligned in the vertical direction with a lateral surface of the horizontal part of the tunnel barrier pattern. ### Claim 7 (depends on 1) The magnetic memory device of claim 1, further comprising a first sub-magnetic pattern between the tunnel barrier pattern and the second part of the first magnetic pattern. ### Claim 8 (depends on 7) The magnetic memory device of claim 7, wherein the second magnetic pattern includes: a vertical part that extends in the vertical direction; and a horizontal part that protrudes in a horizontal direction from a lower portion of the vertical part of the second magnetic pattern, the horizontal direction away from the dielectric pillar, wherein the tunnel barrier pattern includes: a vertical part that extends in the vertical direction; and a horizontal part that protrudes in the horizontal direction from a lower portion of the vertical part of the tunnel barrier pattern, wherein the first sub-magnetic pattern includes: a vertical part that extends in the vertical direction; and a horizontal part that protrudes in the horizontal direction from a lower portion of the vertical part of the first sub-magnetic pattern. ### Claim 9 (depends on 8) The magnetic memory device of claim 8, wherein a lateral surface of the horizontal part of the second magnetic pattern, a lateral surface of the horizontal part of the tunnel barrier pattern, and a lateral surface of the horizontal part of the first sub-magnetic pattern are aligned with each other in the vertical direction. ### Claim 10 (depends on 7) The magnetic memory device of claim 7, further comprising an etch stop layer between the first dielectric pattern and a bottom surface of the first sub-magnetic pattern, wherein the etch stop layer extends onto the top surface of the first dielectric pattern and contacts an outer sidewall of the first magnetic pattern. ### Claim 11 A magnetic memory device, comprising: a substrate; a first dielectric pattern on the substrate; and a plurality of vertical structures that penetrate the first dielectric pattern, wherein the vertical structures are spaced apart from each other in a first direction and a second direction that are parallel to a top surface of the substrate and intersect each other, wherein each of the vertical structures includes: a dielectric pillar including a penetration part that penetrates the first dielectric pattern and a protrusion part that protrudes above a top surface of the first dielectric pattern; a first magnetic pattern between the first dielectric pattern and the dielectric pillar, the first magnetic pattern including a first part that surrounds a lateral surface of the penetration part and a second part that surrounds a lateral surface of the protrusion part; a second magnetic pattern on the first dielectric pattern, the second magnetic pattern surrounding a lateral surface of the second part; and a tunnel barrier pattern on the first dielectric pattern and between the second part and the second magnetic pattern, and wherein each of the first magnetic patterns extends in a third direction perpendicular to the top surface of the substrate. ### Claim 12 (depends on 11) The magnetic memory device of claim 11, further comprising a second dielectric pattern between the second magnetic patterns, the second dielectric pattern extending onto the top surface of the first dielectric pattern. ### Claim 13 (depends on 12) The magnetic memory device of claim 12, further comprising: a plurality of first wiring layers that extend in the second direction and are spaced apart from each other in the first direction, top surfaces of the first wiring layers are correspondingly in contact with bottom surfaces of the first magnetic patterns of the vertical structures that are spaced apart from each other in the second direction; and a plurality of second wiring layers that extend in the first direction and are spaced apart from each other in the second direction on the second dielectric pattern, the second wiring layers correspondingly between the second magnetic patterns of the vertical structures that are spaced apart from each other in the first direction. ### Claim 14 (depends on 13) The magnetic memory device of claim 13, further comprising a plurality of separation dielectric patterns that extend in the first direction between the second wiring layers and are spaced apart from each other in the second direction. ### Claim 15 (depends on 11) The magnetic memory device of claim 11, wherein each of the vertical structures further includes a first sub-magnetic pattern between the tunnel barrier pattern and the second part of each of the first magnetic patterns. ### Claim 16 (depends on 15) The magnetic memory device of claim 15, wherein the second magnetic pattern includes: a vertical part that extends in the third direction; and a horizontal part that protrudes in a horizontal direction from a lower portion of the vertical part of the second magnetic pattern, the horizontal direction being away from the dielectric pillar, wherein the tunnel barrier pattern includes: a vertical part that extends along the third direction; and a horizontal part that protrudes along the horizontal direction from a lower portion of the vertical part of the tunnel barrier pattern, and wherein the first sub-magnetic pattern includes: a vertical part that extends along the third direction; and a horizontal part that protrudes along the horizontal direction from a lower portion of the vertical part of the first sub-magnetic pattern. ### Claim 17 (depends on 16) The magnetic memory device of claim 16, wherein a lateral surface of the horizontal part of the second magnetic pattern, a lateral surface of the horizontal part of the tunnel barrier pattern, and a lateral surface of the horizontal part of the first sub-magnetic pattern are aligned with each other in the third direction. ### Claim 18 A magnetic memory device, comprising: a substrate including a first wiring layer that extends in a second direction; a first dielectric pattern on the substrate; a dielectric pillar on the first wiring layer, the dielectric pillar including a penetration part that penetrates the first dielectric pattern and a protrusion part that protrudes above a top surface of the first dielectric pattern; a first magnetic pattern between the first dielectric pattern and the dielectric pillar on the first wiring layer, the first magnetic pattern including a first part that surrounds a lateral surface of the penetration part and a second part that surrounds a lateral surface of the protrusion part; a second magnetic pattern on the first dielectric pattern, the second magnetic pattern surrounding a lateral surface of the second part; a tunnel barrier pattern on the first dielectric pattern and between the second part and the second magnetic pattern; a second dielectric pattern on the first dielectric pattern, the second dielectric pattern surrounding a lower lateral surface of the second magnetic pattern on the first dielectric pattern; a second wiring layer on the second dielectric pattern, the second wiring layer surrounding an upper lateral surface of the second magnetic pattern; and an upper dielectric pattern that covers a top surface of the tunnel barrier pattern, a top surface of the second magnetic pattern, and a top surface of the second wiring layer, wherein the first magnetic pattern extends in a vertical direction perpendicular to a top surface of the substrate. ### Claim 19 (depends on 18) The magnetic memory device of claim 18, wherein the second magnetic pattern includes: a vertical part that extends along the vertical direction; and a horizontal part that protrudes along a horizontal direction from a lower portion of the vertical part of the second magnetic pattern, the horizontal direction being away from the dielectric pillar, and wherein the tunnel barrier pattern includes: a vertical part that extends along the vertical direction; and a horizontal part that protrudes along the horizontal direction from a lower portion of the vertical part of the tunnel barrier pattern. ### Claim 20 (depends on 19) The magnetic memory device of claim 19, wherein a lateral surface of the horizontal part of the second magnetic pattern and a lateral surface of the horizontal part of the tunnel barrier pattern are aligned with each other in the vertical direction.