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US 2025/0155804 A1Published application
Photoresist composition
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMin-Hung TSAI, Siao-Shan WANG, Chen-Yu LIU, Ching-Yu CHANG
Life of this patent
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Abstract
A photoresist composition comprises a solvent and a polymer. The polymer is dissolved in the solvent. The photoresist composition further comprises a first additive. The first additive is dissolved in the solvent. The first additive is made of a core structure and one or more radical-active functional groups connected to the core structure.
Claims20
A photoresist composition, comprising:
- a solvent;
- a polymer dissolved in the solvent;
- and
- a first additive dissolved in the solvent, wherein the first additive is made of a core structure and one or more radical-active functional groups connected to the core structure.
1 more element
A lithography method, comprising:
- forming a target layer over a substrate;
- depositing a photoresist composition over the target layer to form a photoresist layer, wherein the photoresist composition comprises:
- a solvent;
- a polymer dissolved in the solvent;
- and
- a first additive dissolved in the solvent, wherein the first additive is made of a core structure and one or more radical-active functional groups connected to the core structure;
- exposing the photoresist layer;
- developing the photoresist layer;
- and
- etching the target layer by using the photoresist layer as an etch mask.
7 more elements
A lithography method, comprising:
- forming a target layer over a substrate;
- depositing a photoresist composition over the target layer to form a photoresist layer, wherein the photoresist composition comprises:
- a polymer comprising a polymer backbone and an acid cleavable acid labile group (ALG) bonded to the polymer backbone;
- and
- a first additive made of a core structure and one or more radical-active functional groups connected to the core structure;
- exposing the photoresist layer;
- developing the photoresist layer;
- and
- etching the target layer by using the photoresist layer as an etch mask.
6 more elements
Dependencies are inferred from the claim text.