# US 2025/0154660 A1 · Etching solution composition, production method for said etching solution composition, and etching method using said etching solution composition

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- Number: US 2025/0154660 A1
- Document ID: US20250154660A1
- Status: Published application
- Kind: A1
- Application number: 18/833,162
- Filed: 2023-02-01
- Published: 2025-05-15
- Earliest claimed: 2022-02-02
- Assignees: Kanto Kagaku Kabushiki Kaisha
- Applicants: Kanto Kagaku Kabushiki Kaisha
- Inventors: Hiroki INAZUMI; Toshikazu SHIMIZU; Yuki YOSHIDA
- Web page: https://patentgrep.com/patent/US20250154660A1

## CPC

- C23F 1/26: for etching refractory metals
- H10P 50/691: {for Group IV materials or Group III-V materials}
- C23F: NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams B23K26/00; desurfacing by applying flames B23K7/00; working of metal by electro-erosion B23H; producing decorative effects by removing surface material, e.g. by engraving, by etching, B44C1/22; electrolytic etching or polishing C25F); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

An object of the invention is to provide an etching solution composition which adds an excellent etched surface morphology to a metal to be etched at a suppressed etch rate. The invention relates to an etching solution composition which is obtained by blending at least (A) nitric acid, (B) acetic acid, (C) a phosphorus compound and (D) water and in which the water concentration after blending is 3.0 M or less.

## Claims

### Claim 1

An etching solution composition obtained by blending at least (A) nitric acid, (B) acetic acid, (C) a phosphorus compound, and (D) water, wherein the water concentration after blending is 3.0 M or less.

### Claim 2 (depends on 1)

The etching solution composition of claim 1, wherein the phosphorus compound (C) is one or more selected from phosphoric acid, phosphonic acid, hydroxyethylidene diphosphonic acid (HEDP), and phosphorus oxide.

### Claim 3 (depends on 1)

The etching solution composition of claim 1, which is obtained by further blending (E) an acid anhydride.

### Claim 4 (depends on 3)

The etching solution composition of claim 3, wherein the acid anhydride (E) is acetic anhydride.

### Claim 5 (depends on 1)

The etching solution composition of claim 1, which is obtained by blending the nitric acid (A) at a concentration of 0.5 M or more.

### Claim 6 (depends on 1)

The etching solution composition of claim 1, which is for etching treatment of molybdenum or a metal containing molybdenum.

### Claim 7 (depends on 1)

The etching solution composition of claim 1, which is for creating a pattern having a three-dimensional structure.

### Claim 8 (depends on 1)

A method for producing the etching solution composition of claim 1, comprising a process of mixing the nitric acid (A), the acetic acid (B), the phosphorus compound (C), and the water (D).

### Claim 9 (depends on 1)

A method for producing the etching solution composition of claim 1, comprising a method of adding the acid anhydride (E) after mixing the nitric acid (A), the acetic acid (B), the phosphorus compound (C), and the water (D).

### Claim 10 (depends on 1)

An etching method using the etching solution composition of claim 1, wherein the temperature of the etching solution composition is 15° C. to 50° C.