# US 2025/0154643 A1 · Area selective deposition of metals for electronic devices > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2025/0154643 A1 - Document ID: US20250154643A1 - Status: Published application - Kind: A1 - Application number: 18/937,950 - Filed: 2024-11-05 - Published: 2025-05-15 - Earliest claimed: 2023-11-14 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Kai-Hung Yu; Ryota Yonezawa; Yuji Otsuki; Hidenao Suzuki; Robert D. Clark; Gyanaranjan Pattanaik - Web page: https://patentgrep.com/patent/US20250154643A1 ## CPC - C23C 16/04: Coating on selected surface areas, e.g. using masks - C23C 16/16: from metal carbonyl compounds - C23C 16/45534: {Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers} - H10P 14/432: {using selective deposition} - H10W 20/045: {for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Method for area selective deposition (ASD) on a substrate containing a growth surface that is exposed and a non-growth surface that is exposed. The method includes cyclical exposures of a deposition gas containing a metal carbonyl precursor, the metal carbonyl precursor decomposing on the growth surface such that a metal film is deposited on the growth surface and carbon monoxide (CO) gas is released, and an inhibitor gas after stopping the flow of the deposition gas to the substrate. The cycling between flowing the deposition gas to the substrate and flowing the inhibitor gas to the substrate is repeated to selectively form the metal film on the growth surface relative to the non-growth surface, where the inhibitor gas increases the selectivity of the metal film formed on the growth surface when compared to the selectivity of the metal film formed on the growth surface without the inhibitor gas. ## Claims ### Claim 1 A method for area selective deposition, the method comprising: providing a substrate containing a growth surface that is exposed and an non-growth surface that is exposed; flowing a deposition gas containing a metal carbonyl precursor to the substrate, the metal carbonyl precursor decomposing on the growth surface such that a metal film is deposited on the growth surface and carbon monoxide (CO) gas is released; stopping the flow of the deposition gas to the substrate; flowing an inhibitor gas to the substrate after stopping the flow of the deposition gas to the substrate; and repeatedly cycling between flowing the deposition gas to the substrate and flowing the inhibitor gas to the substrate, wherein the cycling selectively forms the metal film on the growth surface relative to the non-growth surface, and wherein the flowing the inhibitor gas increases the selectivity of the metal film formed on the growth surface when compared to the selectivity of the metal film formed on the growth surface without flowing the inhibitor gas. ### Claim 2 (depends on 1) The method of claim 1, wherein the metal film contains copper (Cu), ruthenium (Ru), iron (Fe), nickel (Ni), manganese (Mn), chromium (Cr), tungsten (W), molybdenum (Mo), cobalt (Co), rhodium (Rh), or platinum (Pt). ### Claim 3 (depends on 1) The method of claim 1, wherein the metal surface contains copper (Cu), ruthenium (Ru), molybdenum (Mo), tungsten (W), manganese (Mn), or niobium (Nb). ### Claim 4 (depends on 1) The method of claim 1, wherein the inhibitor gas contains CO gas, CO2 gas, Cl2 gas, or NH3 gas. ### Claim 5 (depends on 1) The method of claim 1, wherein the metal carbonyl precursor contains Ru3(CO)12 and the metal film contains Ru metal. ### Claim 6 (depends on 1) The method of claim 1, wherein the growth surface and the non-growth surface are in the same horizontal plane. ### Claim 7 (depends on 1) The method of claim 1, wherein the growth surface is located at a bottom of a recessed feature formed in a material containing the non-growth surface. ### Claim 8 (depends on 1) The method of claim 1, wherein the growth surface includes a metal surface and the non-growth surface includes a dielectric material. ### Claim 9 (depends on 1) The method of claim 1, wherein the flowing the inhibitor gas increases the density of metal nuclei on the growth surface when compared to the density of the metal nuclei on the growth surface without presence of the inhibitor gas. ### Claim 10 (depends on 1) The method of claim 1, wherein the deposition gas further contains a CO carrier gas. ### Claim 11 A method for area selective deposition, the method comprising: providing a substrate containing a metal surface that is exposed and a non-metal surface that is exposed; flowing a deposition gas containing a ruthenium (Ru) carbonyl precursor to the substrate, the ruthenium carbonyl precursor decomposing on the metal surface such that a Ru metal film is deposited on the metal surface and carbon monoxide (CO) gas is released; stopping the flow of the deposition gas to the substrate; flowing an inhibitor gas to the substrate after stopping the flow of the deposition gas to the substrate; and repeatedly cycling between flowing the deposition gas to the substrate and flowing the inhibitor gas to the substrate, wherein the cycling selectively forms the Ru metal film on the metal surface relative to the dielectric surface, and wherein the flowing the inhibitor gas increases the selectivity of the Ru metal film formed on the metal surface when compared to the selectivity of the Ru metal film formed on the metal surface without flowing the inhibitor gas. ### Claim 12 (depends on 11) The method of claim 11, wherein the metal film contains copper (Cu), ruthenium (Ru), iron (Fe), nickel (Ni), manganese (Mn), chromium (Cr), tungsten (W), molybdenum (Mo), cobalt (Co), rhodium (Rh), or platinum (Pt). ### Claim 13 (depends on 11) The method of claim 11, wherein the metal surface includes copper (Cu), ruthenium (Ru), molybdenum (Mo), tungsten (W), manganese (Mn), or niobium (Nb). ### Claim 14 (depends on 11) The method of claim 11, wherein the inhibitor gas contains CO gas, CO2 gas, Cl2 gas, or NH3 gas. ### Claim 15 (depends on 11) The method of claim 11, wherein the growth surface includes a metal surface and the non-growth surface includes a dielectric material. ### Claim 16 (depends on 11) The method of claim 11, wherein the flowing the inhibitor gas increases the density of metal nuclei on the growth surface when compared to the density of the metal nuclei on the growth surface without presence of the inhibitor gas. ### Claim 17 (depends on 11) The method of claim 11, wherein the deposition gas further contains a CO carrier gas. ### Claim 18 A method for area selective deposition, the method comprising: providing a substrate containing a metal surface that is exposed and a non-metal surface that is exposed, where the metal surface has a plurality of different grain orientations; flowing a deposition gas containing a metal carbonyl precursor to the substrate, the metal carbonyl precursor decomposing on the metal surface such that a metal film is deposited on the metal surface and carbon monoxide (CO) gas is released; stopping the flow of the deposition gas to the substrate; flowing an inhibitor gas to the substrate after stopping the flow of the deposition gas to the substrate; and repeatedly cycling between flowing the deposition gas to the substrate and flowing the inhibitor gas to the substrate, wherein the cycling selectively forms the metal film on the metal surface relative to the dielectric surface, and wherein the flowing the inhibitor gas increases the thickness uniformity of the metal film formed on the plurality of different grain orientations when compared to the selectivity of the metal film formed on the plurality of different orientations without flowing the inhibitor gas. ### Claim 19 (depends on 18) The method of claim 18, wherein the metal film contains copper (Cu), ruthenium (Ru), iron (Fe), nickel (Ni), manganese (Mn), chromium (Cr), tungsten (W), molybdenum (Mo), cobalt (Co), rhodium (Rh), or platinum (Pt), and wherein the metal surface includes copper (Cu), ruthenium (Ru), molybdenum (Mo), tungsten (W), manganese (Mn), or niobium (Nb). ### Claim 20 (depends on 18) The method of claim 18, wherein the inhibitor gas contains CO gas, CO2 gas, Cl2 gas, or NH3 gas.