Organometallic Compound For Protective Layer, Protective Layer, Method For Processing Organic Semiconductor Layer, and Method for Manufacturing Organic Semiconductor Device

A protective layer being formed over an organic semiconductor layer, comprising an organometallic compound represented by Formula (G1), and being used to improve heat resistance of the organic semiconductor layer,

• wherein:
• Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms;
• X represents oxygen or sulfur;
• M represents a metal;
• n represents an integer greater than or equal to 1 and less than or equal to 5;
• and
• a valence of the metal M is the same as n.

A method for processing an organic semiconductor layer, comprising:

• a step of forming the organic semiconductor layer over a first electrode;
• a step of forming a protective layer comprising an organometallic compound represented by Formula (G1) over the organic semiconductor layer;
• a step of applying heat higher than or equal to 100° C. to the organic semiconductor layer;
• and
• a step of removing the protective layer,
• wherein:
• Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms;
• X represents oxygen or sulfur;
• M represents a metal;
• n represents an integer greater than or equal to 1 and less than or equal to 5;
• and
• a valence of the metal M is the same as n.

A method for manufacturing an organic semiconductor device, comprising:

• a step of forming an organic semiconductor film over a first electrode;
• a step of forming a protective film comprising an organometallic compound represented by Formula (G1) over the organic semiconductor film;
• a step of forming a first aluminum oxide film over the protective film;
• a step of forming a metal film or a metal compound film over the first aluminum oxide film;
• a step of forming a photomask over the metal film or the metal compound film;
• a step of etching the metal film or the metal compound film with use of the photomask to form a metal layer or a metal compound layer overlapping with the first electrode;
• a step of removing the photomask;
• a step of etching the first aluminum oxide film, the protective film and the organic semiconductor film with use of the metal layer or the metal compound layer as a mask to form a first aluminum oxide layer, a protective layer and an organic semiconductor layer;
• a step of removing the metal layer or the metal compound layer;
• a step of forming an organic resin film covering the first electrode, the organic semiconductor layer, the protective layer and the first aluminum oxide layer;
• a step of forming an opening portion in the organic resin film where the opening portion overlaps with the first electrode, the organic semiconductor layer, the protective layer and the first aluminum oxide layer;
• a step of removing a part of the protective layer and a part of the first aluminum oxide layer that overlap with the opening portion;
• and
• a step of applying heat higher than or equal to 100° C. to the organic semiconductor film or the organic semiconductor layer after the step of forming the protective film and before the step of removing the protective layer,
• wherein:
• Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms;
• X represents oxygen or sulfur;
• M represents a metal;
• n represents an integer greater than or equal to 1 and less than or equal to 5;
• and
• a valence of the metal M is the same as n.

A method for manufacturing an organic semiconductor device, comprising:

• a step of forming an organic semiconductor film over a first electrode;
• a step of forming a protective film comprising an organometallic compound represented by Formula (G1) over the organic semiconductor film;
• a step of forming a first aluminum oxide film over the protective film;
• a step of forming a metal film or a metal compound film over the first aluminum oxide film;
• a step of forming a photomask over the metal film or the metal compound film;
• a step of etching the metal film or the metal compound film with use of the photomask to form a metal layer or a metal compound layer overlapping with the first electrode;
• a step of removing the photomask;
• a step of etching the first aluminum oxide film, the protective film and the organic semiconductor film with use of the metal layer or the metal compound layer as a mask to form a first aluminum oxide layer, a protective layer and an organic semiconductor layer;
• a step of removing the metal layer or the metal compound layer;
• a step of forming a second aluminum oxide film covering the first electrode, the organic semiconductor layer, the protective layer and the first aluminum oxide layer;
• a step of forming an organic resin film covering the first electrode, the organic semiconductor layer, the protective layer, the first aluminum oxide layer and the second aluminum oxide film;
• a step of forming an opening portion in the organic resin film where the opening portion overlaps with the first electrode, the organic semiconductor layer, the protective layer, the first aluminum oxide layer and the second aluminum oxide film;
• a step of removing a part of the protective layer, a part of the first aluminum oxide layer, and a part of the second aluminum oxide film that overlap with the opening portion with use of water or a liquid comprising water;
• and
• a step of applying heat higher than or equal to 100° C. to the organic semiconductor film or the organic semiconductor layer after the step of forming the protective film and before the step of removing the protective layer,
• wherein:
• Ar represents a substituted or unsubstituted aryl group having 6 to 30 carbon atoms or a substituted or unsubstituted heteroaryl group having 1 to 30 carbon atoms;
• X represents oxygen or sulfur;
• M represents a metal;
• n represents an integer greater than or equal to 1 and less than or equal to 5;
• and
• a valence of the metal M is the same as n.