# US 2025/0149451 A1 · Semiconductor device structure with composite interconnect structure and method for preparing the same

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- Number: US 2025/0149451 A1
- Document ID: US20250149451A1
- Status: Published application
- Kind: A1
- Application number: 19/014,282
- Filed: 2025-01-09
- Published: 2025-05-08
- Earliest claimed: 2022-08-05
- Assignees: Nanya Technology Corporation
- Applicants: Nanya Technology Corporation
- Inventors: TSE-YAO HUANG
- Web page: https://patentgrep.com/patent/US20250149451A1

## CPC

- H10W 20/4451: {Semiconductor materials, e.g. polysilicon}
- H10P 14/416: {of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers}
- H10P 30/40: into insulating materials
- H10P 32/302: {Doping polycrystalline silicon or amorphous silicon layers}
- H10P 50/283: {by chemical means}
- H10W 20/063: {by forming conductive members before forming protective insulating material}
- H10W 20/0633: {using subtractive patterning of the conductive members}
- H10W 20/435: {Cross-sectional shapes or dispositions of interconnections}
- H10W 20/48: Insulating materials thereof
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device structure includes a first lower semiconductor structure disposed over a semiconductor substrate. The first lower semiconductor structure has a first sidewall and a second sidewall opposite to the first sidewall. The semiconductor device structure also includes a first upper semiconductor structure covering a top surface and the first sidewall of the first lower semiconductor structure. The first lower semiconductor structure and the first upper semiconductor structure include different materials. The semiconductor device structure further includes a first oxide portion disposed over the semiconductor substrate and extending along the second sidewall of the first lower semiconductor structure. The first oxide portion has an L-shape.

## Claims

### Claim 1

A semiconductor device structure, comprising:
a first lower semiconductor structure disposed over a semiconductor substrate, wherein the first lower semiconductor structure has a first sidewall and a second sidewall opposite to the first sidewall;
a first upper semiconductor structure covering a top surface and the first sidewall of the first lower semiconductor structure, wherein the first lower semiconductor structure and the first upper semiconductor structure comprise different materials;
a first oxide portion disposed over the semiconductor substrate and extending along the second sidewall of the first lower semiconductor structure;
a dielectric layer disposed over the first oxide portion, wherein the first oxide portion separates the dielectric layer from the semiconductor substrate;
a second lower semiconductor structure disposed over the semiconductor substrate, wherein the second lower semiconductor structure has a third sidewall facing the second sidewall of the first lower semiconductor structure and a fourth sidewall opposite to the third sidewall;
a second upper semiconductor structure covering a top surface and the third sidewall of the second lower semiconductor structure; and
a second oxide portion disposed over the semiconductor substrate and extending along the fourth sidewall of the second lower semiconductor structure, wherein the second oxide portion is covered by the dielectric layer;
wherein the first oxide portion is in direct contact with a sidewall of the second upper semiconductor structure;
wherein a material of the first oxide portion is the same as a material of the second oxide portion.

### Claim 2 (depends on 1)

The semiconductor device structure of claim 1, wherein the first upper semiconductor structure is in direct contact with the top surface and the first sidewall of the first lower semiconductor structure, and
wherein the first oxide portion is in direct contact with the second sidewall of the first lower semiconductor structure.

### Claim 3 (depends on 1)

The semiconductor device structure of claim 1, wherein the first lower semiconductor structure and the dielectric layer are separated by the first upper semiconductor structure and the first oxide portion.

### Claim 4 (depends on 1)

The semiconductor device structure of claim 1, wherein the first lower semiconductor structure comprises doped polysilicon, and the first upper semiconductor structure comprises germanium (Ge).

### Claim 5 (depends on 1)

The semiconductor device structure of claim 1, wherein a bottom surface of the first upper semiconductor structure is higher than a bottom surface of the first lower semiconductor structure.

### Claim 6 (depends on 1)

The semiconductor device structure of claim 1, wherein the first oxide portion is in direct contact with the first upper semiconductor structure.