# US 2025/0149412 A1 · Leadless semiconductor packages, leadframes therefor, and methods of making

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- Number: US 2025/0149412 A1
- Document ID: US20250149412A1
- Status: Published application
- Kind: A1
- Application number: 19/020,459
- Filed: 2025-01-14
- Published: 2025-05-08
- Earliest claimed: 2009-01-29
- Assignees: Semiconductor Components Industries, LLC
- Applicants: Semiconductor Components Industries, LLC
- Inventors: Darrell D. TRUHITTE; Soon Wei WANG; Chee Hiong CHEW
- Web page: https://patentgrep.com/patent/US20250149412A1

## CPC

- H10W 70/421: {Shapes or dispositions}
- H10W 70/042: {Etching}
- H10W 70/424: {Cross-sectional shapes (H10W70/481 takes precedence)}
- H10W 70/457: {of metallic layers on leadframes}
- H10W 74/014: {using batch processing}
- H10W 90/811: {Multiple chips on leadframes}
- H10W 72/0198: {batch processes}
- H10W 72/075: {of bond wires}
- H10W 72/536: {the connected ends being ball-shaped}
- H10W 72/5445: {being orthogonal to a side surface of the chip, e.g. parallel arrangements}
- H10W 72/5449: {not being orthogonal to a side surface of the chip, e.g. fan-out arrangements}
- H10W 72/552: {comprising metals or metalloids, e.g. silver}
- H10W 72/5522: {comprising gold [Au]}
- H10W 72/5524: {comprising aluminium [Al]}
- H10W 72/5525: {comprising copper [Cu]}
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/932: {Plan-view shape, i.e. in top view}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)}
- H10W 74/111: {the semiconductor body being completely enclosed}
- H10W 76/17: characterised by their materials
- H10W 90/755: {between a chip and a laterally-adjacent insulating package substrate, interpose or RDL}
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A leadframe includes a frame, a die pad, a contact including a flank adjacent to the frame, a first tie bar between the frame and die pad, and a second tie bar between the die pad and contact. The leadframe is disposed over a carrier. A semiconductor die is disposed over the die pad. An encapsulant is deposited over the leadframe and semiconductor die including between the carrier and half-etched portions of the leadframe. A first trench is formed in the encapsulant to remove a portion of the frame and expose the flank of the contact. A conductive layer is formed over the flank by electroplating. A second trench is formed in the encapsulant through the second tie bar after forming the conductive layer.

## Claims

### Claim 1

A semiconductor device, comprising:
a semiconductor die;
a contact comprising an exposed flank;
an encapsulant coupled at least partially over the semiconductor die and the contact; and
a trench that extends only partially into the encapsulant, wherein an inner side of the contact is exposed by the trench.

### Claim 2 (depends on 1)

The device of claim 1, further comprising a conductive layer over the flank of the contact for a full vertical thickness of the contact.

### Claim 3 (depends on 1)

The device of claim 1, wherein the trench extends into the encapsulant for a full thickness of the contact.

### Claim 4 (depends on 1)

The device of claim 1, further comprising a die pad under the semiconductor die.

### Claim 5 (depends on 4)

The device of claim 4, further comprising a frame coupled between the die pad and the semiconductor die.

### Claim 6 (depends on 5)

The device of claim 5, wherein the trench extends to a depth of the frame within the encapsulant.

### Claim 7 (depends on 1)

The device of claim 1, further comprising a bond wire extending between the semiconductor die and the contact.

### Claim 8 (depends on 1)

The device of claim 1, wherein a depth of the trench is greater than a height of the contact.

### Claim 9

A semiconductor device, comprising:
a semiconductor die coupled to a die pad;
a contact comprising an exposed flank;
an encapsulant coupled at least partially over the semiconductor die and the contact; and
a trench that extends only partially into the encapsulant between the semiconductor die and the die pad, wherein the trench is at least as deep as a thickness of the contact.

### Claim 10 (depends on 9)

The device of claim 9, further comprising a conductive layer over the flank of the contact for the full vertical thickness of the contact.

### Claim 11 (depends on 9)

The device of claim 9, wherein the contact is exposed on a sidewall of the trench.

### Claim 12 (depends on 9)

The device of claim 9, wherein the encapsulant is between the contact and the trench.

### Claim 13 (depends on 9)

The device of claim 9, further comprising a frame coupled between the die pad and the semiconductor die.

### Claim 14 (depends on 9)

The device of claim 9, further comprising a bond wire extending between the semiconductor die and the contact.

### Claim 15 (depends on 9)

The device of claim 9, wherein the encapsulant is directly coupled to five sides of the die pad.

### Claim 16

A semiconductor device, comprising:
a semiconductor die;
a contact adjacent to the semiconductor die;
a tie bar adjacent to the semiconductor die; and
an encapsulant coupled at least partially over the semiconductor die and the contact;
wherein a flank of the contact is exposed; and
wherein a trench in a first surface of the encapsulant extends laterally adjacent to the contact for a full vertical thickness of the contact to expose an inner side of the contact, the trench extending only partially into a thickness of the encapsulant.

### Claim 17 (depends on 16)

The device of claim 16, further comprising a conductive layer over the flank of the contact for the full vertical thickness of the contact.

### Claim 18 (depends on 16)

The device of claim 16, further comprising a die pad under the semiconductor die, wherein the tie bar extends from a second surface of the encapsulant to the die pad.

### Claim 19 (depends on 16)

The device of claim 16, further comprising a bond wire extending from one of the first surface of the encapsulant or a second surface of the encapsulant.

### Claim 20 (depends on 16)

The device of claim 16, wherein the tie bar extends from a second surface of the encapsulant to the contact.