# US 2025/0149408 A1 · Electronic device

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- Number: US 2025/0149408 A1
- Document ID: US20250149408A1
- Status: Published application
- Kind: A1
- Application number: 19/014,408
- Filed: 2025-01-09
- Published: 2025-05-08
- Earliest claimed: 2018-06-01
- Assignees: Innolux Corporation
- Applicants: InnoLux Corporation
- Inventors: Jui-Jen YUEH; Kuan-Feng LEE; Yuan-Lin WU
- Web page: https://patentgrep.com/patent/US20250149408A1

## CPC

- H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
- H10D 64/517: {characterised by the conducting layers}
- H10W 20/2125: {Top-view shapes}
- H10W 20/4421: {the principal metal being copper}
- H10W 70/688: {Flexible insulating substrates}
- H10W 70/635: {Through-vias}
- H10W 70/685: comprising multiple insulating layers
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An electronic device includes: a substrate including a through hole; a connecting element disposed in the through hole; a first insulating layer disposed on the substrate and including a first via; a first conductive element disposed on the first insulating layer and electrically connected to the connecting element through the first via; a second conductive element disposed under the substrate and electrically connected to the connecting element; and a semiconductor disposed between the substrate and the first insulating layer.

## Claims

### Claim 1

An electronic device, comprising:
a substrate comprising a through hole;
a connecting element disposed in the through hole;
a first insulating layer disposed on the substrate and comprising a first via;
a first conductive element disposed on the first insulating layer and electrically connected to the connecting element through the first via;
a second conductive element disposed under the substrate and electrically connected to the connecting element; and
a semiconductor disposed between the substrate and the first insulating layer.

### Claim 2 (depends on 1)

The electronic device of claim 1, wherein the substrate is a glass substrate.

### Claim 3 (depends on 1)

The electronic device of claim 1, wherein the substrate is a wafer.

### Claim 4 (depends on 1)

The electronic device of claim 1, wherein the connecting element comprises Cu.

### Claim 5 (depends on 1)

The electronic device of claim 1, wherein a distance between the semiconductor and the connecting element ranges from 5 μm to 500 μm along a direction perpendicular to a normal direction of the substrate.

### Claim 6 (depends on 1)

The electronic device of claim 1, wherein the semiconductor comprises silicon or metal oxide.

### Claim 7 (depends on 1)

The electronic device of claim 1, wherein a material of the connecting element is different from a material of the first conductive element.

### Claim 8 (depends on 1)

The electronic device of claim 1, further comprising a chip disposed on the substrate.

### Claim 9 (depends on 8)

The electronic device of claim 8, wherein the chip comprises an organic light emitting diode.

### Claim 10 (depends on 8)

The electronic device of claim 8, wherein the chip comprises an inorganic light emitting diode.

### Claim 11 (depends on 8)

The electronic device of claim 8, wherein the chip is electrically connected to the semiconductor.

### Claim 12 (depends on 1)

The electronic device of claim 1, further comprising a gate electrode disposed corresponding to the semiconductor.