# US 2025/0149385 A1 · Method for manufacturing semiconductor device

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- Number: US 2025/0149385 A1
- Document ID: US20250149385A1
- Status: Published application
- Kind: A1
- Application number: 19/016,086
- Filed: 2025-01-10
- Published: 2025-05-08
- Earliest claimed: 2021-02-03
- Assignees: Denso Corporation; Toyota Jidosha Kabushiki Kaisha; MIRISE Technologies Corporation
- Applicants: Denso Corporation; Toyota Jidosha Kabushiki Kaisha; MIRISE Technologies Corporation
- Inventors: Hiroki MIYAKE; Tatsuji NAGAOKA
- Web page: https://patentgrep.com/patent/US20250149385A1

## CPC

- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10P 30/202: {characterised by the semiconductor materials}
- H10P 30/21: {of electrically active species}
- H10P 30/28: characterised by an annealing step, e.g. for activation of dopants
- H10P 50/00: Etching of wafers, substrates or parts of devices
- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P 95/80: Electrical treatments, e.g. for electroforming
- H10D 62/405: {Orientations of crystalline planes}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A method for manufacturing a semiconductor device includes: preparing a substrate made of a compound semiconductor containing a first element and a second element that is bonded to the first element and has an electronegativity smaller than that of the first element by 1.5 or more; causing an electric current to flow in the substrate; and dividing the substrate at a position including a current region where the electric current is caused to flow and along a cleavage plane of the substrate. A method for manufacturing a semiconductor device includes: stacking a first substrate and a second substrate each made of the compound semiconductor; and bonding the first substrate and the second substrate by causing an electric current to flow between the first substrate and the second substrate.

## Claims

### Claim 1

A method for manufacturing a semiconductor device, comprising:
stacking a first substrate and a second substrate; and
bonding the first substrate and the second substrate by causing an electric current to flow between the first substrate and the second substrate, wherein
the first substrate and the second substrate are each made of a compound semiconductor, and
the compound semiconductor contains a first element and a second element that is bonded to the first element and has an electronegativity smaller than that of the first element by 1.5 or more.

### Claim 2 (depends on 1)

The method according to claim 1, further comprising:
prior to the stacking of the first substrate and the second substrate, introducing a dopant or a dissimilar material different from the semiconductor compound to a surface of the first substrate, wherein
in the stacking of the first substrate and the second substrate, the second substrate is stacked on the surface of the first substrate.

### Claim 3 (depends on 1)

The method according to claim 1, further comprising:
prior to the bonding of the first substrate and the second substrate, increasing a resistance of at least one of a surface layer portion of the first substrate and a surface layer portion of the second substrate by annealing at least one of the first substrate and the second substrate.

### Claim 4 (depends on 1)

The method according to claim 1, wherein
prior to the bonding of the first substrate and the second substrate, increasing a thermal resistance of at least one of a surface layer portion of the first substrate and a surface layer portion of the second substrate by annealing at least one of the first substrate and the second substrate.

### Claim 5 (depends on 1)

The method according to claim 1, wherein
the compound semiconductor is an oxide semiconductor, and
the first element is oxygen.

### Claim 6 (depends on 5)

The method according to claim 5, wherein
the compound semiconductor is made of β-Ga2O3.