Photoresist composition and method of manufacturing integrated circuit device using the same

A photoresist composition, comprising:

• an organometallic compound including at least one metal-ligand bond and configured to dissociate the at least one metal-ligand bond based on absorbing first light having a wavelength of about 10 nm to about 300 nm, the at least one metal-ligand bond including a metal core and at least one organic ligand bonded to the metal core;
• a photosensitive additive configured to be excited based on absorbing second light having a wavelength of about 300 nm to about 450 nm to induce an oxidation-reduction reaction of the organometallic compound;
• and
• a solvent.

A method of manufacturing an integrated circuit device, the method comprising:

• forming a photoresist film on a substrate based on using a photoresist composition including an organometallic compound and a photosensitive additive, the organometallic compound including a metal core and at least one metal-ligand bond bonded to the metal core, wherein the organometallic compound has a sensitivity to first light and the photosensitive additive has a sensitivity to second light;
• exposing a first area of the photoresist film to the first light;
• exposing an entire area of the photoresist film to the second light;
• forming a network of metal structures in the first area based on baking the photoresist film;
• and
• forming a photoresist pattern based on developing the photoresist film in which the network of the metal structures is formed, the photoresist pattern including the network of the metal structures,
• wherein the first light has a wavelength of about 10 nm to about 300 nm, and the second light has a wavelength of about 300 nm to about 450 nm.