Magnetoresistive sensor
AssigneeInfineon Technologies AG
InventorsBernhard ENDRES, Andreas STRAßER
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Abstract
The present disclosure relates to a magnetoresistive sensor. The magnetoresistive sensor includes at least one sensor element having a layer stack. The layer stack includes a magnetically free layer with a magnetically free magnetization. A measurement sensitivity of the sensor element is temperature-dependent. The magnetoresistive sensor also includes a device which is configured to induce a temperature-dependent mechanical stress in the magnetically free layer. The temperature dependence of the measurement sensitivity can be at least partially compensated for by the temperature-dependent mechanical stress.
Claims19
A magnetoresistive sensor, comprising:
- a sensor element having a layer stack which comprises a magnetically free layer with a magnetically free magnetization,
- wherein a measurement sensitivity of the sensor element is temperature-dependent;
- and
- a device configured to induce a temperature-dependent mechanical stress in the magnetically free layer.
The magnetoresistive sensor as claimed in claim 13, wherein the magnetically free layer has a vortex magnetization.
A method for influencing a temperature-dependent measurement sensitivity of a magnetoresistive sensor, comprising:
- arranging at least one sensor element having a layer stack on a substrate, wherein the layer stack comprises a magnetically free layer with a magnetically free magnetization;
- and
- exerting a temperature-dependent mechanical force on the magnetically free layer of each sensor element of the at least one sensor element in order to induce a mechanical stress in the magnetically free layer of each sensor element.
A magnetoresistive sensor comprising:
- a tunnel magnetoresistance (TMR) sensor element having a magnetically free layer, wherein a measurement sensitivity of the TMR sensor element is temperature-dependent;
- and
- a stress-inducing layer which is mechanically coupled to the TMR sensor element, has a coefficient of thermal expansion, and is configured to induce a temperature-dependent mechanical stress in the magnetically free layer.
Dependencies are inferred from the claim text.