# US 2025/0146884 A1 · Channel structure and semiconductor manufacturing device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2025/0146884 A1 - Document ID: US20250146884A1 - Status: Published application - Kind: A1 - Application number: 18/850,358 - Filed: 2023-03-29 - Published: 2025-05-08 - Earliest claimed: 2022-03-29 - Assignees: KYOCERA Corporation - Applicants: KYOCERA Corporation - Inventors: Miki HAMADA; Daiki WATANABE; Yuya OGAWA - Web page: https://patentgrep.com/patent/US20250146884A1 ## CPC - G01K 7/02: using thermoelectric elements, e.g. thermocouples - C23C 16/44: characterised by the method of coating (C23C16/04 takes precedence) - C23C 16/45561: {Gas plumbing upstream of the reaction chamber} - C23C 16/45565: {Shower nozzles} - H01J 37/3244: {Gas supply means} - H10P 14/60: of insulating materials - H10P 50/242: {of Group IV materials} - H10P 72/70: for supporting or gripping - H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass - H01J 2237/3321: CVD [Chemical Vapor Deposition] - H01J 2237/334: Etching - G01K: MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR (radiation pyrometry G01J5/00) - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A channel structure includes a base, a channel, a plurality of openings, first metal wiring, and second metal wiring. The base has a first surface and is constituted of ceramic. The channel is located inside the base and includes a plurality of branch paths. The plurality of openings are located in the first surface and are respectively connected to the plurality of branch paths. The first metal wiring is at least partially located inside the base and is constituted of a first metal. The second metal wiring is at least partially located inside the base and is constituted of a second metal different from the first metal. The first metal wiring and the second metal wiring are connected to each other inside the base and constitute a thermocouple portion having a thermocouple function. The base includes a plurality of the thermocouple portions. ## Claims ### Claim 1 A channel structure comprising: a base comprising a first surface and constituted of ceramic; a channel located inside the base and comprising a plurality of branch paths; a plurality of openings located in the first surface and respectively connected to the plurality of branch paths; a first metal wiring at least partially located inside the base, the first metal wiring being constituted of a first metal; and a second metal wiring at least partially located inside the base, the second metal wiring being constituted of a second metal that is different from the first metal, wherein the first metal wiring and the second metal wiring are connected to each other inside the base and constitute a thermocouple portion having a thermocouple function, and the base comprises a plurality of the thermocouple portions. ### Claim 2 (depends on 1) The channel structure according to claim 1, wherein when the first surface is viewed from a front, the plurality of thermocouple portions have different distances from a center of the first surface. ### Claim 3 (depends on 2) The channel structure according to claim 2, wherein the base comprises three or more thermocouple portions being the plurality of thermocouple portions, and the three or more thermocouple portions have different distances from the center of the first surface when the first surface is viewed from the front. ### Claim 4 (depends on 3) The channel structure according to claim 3, wherein the three or more thermocouple portions are located being arranged on a straight line. ### Claim 5 (depends on 1) The channel structure according to claim 1, wherein the plurality of thermocouple portions have different distances from the first surface. ### Claim 6 (depends on 5) The channel structure according to claim 5, wherein when the first surface is viewed from a front, the plurality of thermocouple portions are located at positions overlapping each other. ### Claim 7 (depends on 1) The channel structure according to claim 1, wherein when the first surface is viewed from a front, the first metal wiring and the second metal wiring surround an opening of the plurality of openings, and a thermocouple portion of the plurality of thermocouple portions is located around the opening. ### Claim 8 (depends on 7) The channel structure according to claim 7, wherein when the first surface is viewed from the front, the thermocouple portion surrounds the opening. ### Claim 9 (depends on 7) The channel structure according to claim 7, wherein when the first surface is viewed from the front, the first metal wiring and the second metal wiring are located overlapping each other at the thermocouple portion. ### Claim 10 (depends on 7) The channel structure according to claim 7, wherein the thermocouple portion comprises a region containing the first metal and the second metal. ### Claim 11 (depends on 1) The channel structure according to claim 1, wherein at least one of one piece of the first metal wiring and one piece of the second metal wiring is connected to the plurality of thermocouple portions. ### Claim 12 (depends on 1) The channel structure according to claim 1, wherein the channel comprises an introduction path located on an upstream side of the plurality of branch paths, and when the first surface is viewed from a front, the first metal wiring and the second metal wiring surround the introduction path, and a thermocouple portion of the plurality of thermocouple portions is located around the introduction path. ### Claim 13 (depends on 1) The channel structure according to claim 1, wherein a thermocouple portion of the plurality of thermocouple portions is located at a position more away from a center of the first surface than an opening group constituted of the plurality of openings when the first surface is viewed from a front. ### Claim 14 (depends on 13) The channel structure according to claim 13, wherein the base further comprises an RF electrode located in an inner portion, and the thermocouple portion is located at a position more away from the center of the first surface than the RF electrode when the first surface is viewed from the front. ### Claim 15 (depends on 13) The channel structure according to claim 13, wherein the base further comprises an RF electrode located in an inner portion, and the thermocouple portion is located at a position more away from the first surface than the RF electrode. ### Claim 16 (depends on 1) A semiconductor manufacturing device comprising: a mounting table; a chamber comprising an opening portion; and the channel structure according to claim 1. ### Claim 17 (depends on 16) The semiconductor manufacturing device according to claim 16, wherein a plurality of the thermocouple portions have different distances from the opening portion.