Structure for Producing Diamond and Method for Manufacturing Same
AssigneesAtsuhito Sawabe, Yutaka Kimura, National University Corporation Nagaoka University of Technology, Waseda University, Disco Corporation
InventorsHideo Aida, Atsuhito Sawabe, Yutaka Kimura, Jun Mizuno, Ryuji Oshima
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Abstract
Provided are a structure for producing a high-quality single crystal diamond, and a method for manufacturing the structure for producing diamond. A structure for producing a diamond is composed of a base substrate and an Ir thin film formed on the base substrate. The thermal expansion coefficient of the base substrate is 5 times or less of the thermal expansion coefficient of diamond and the melting point of the base substrate is 700° C. or higher. The peak angle in the X-ray diffraction pattern of the Ir thin film is different from the peak angle in the X-ray diffraction pattern of the base substrate.
Claims28
A method for manufacturing a structure for producing a diamond, the method comprising:
- an Ir film forming step of forming an Ir thin film on a dummy substrate having a melting point of 700° C. or higher;
- a mounting step of mounting the dummy substrate on which the Ir thin film is formed on a beforehand-prepared base substrate so that the Ir thin film formed in the Ir film forming step and the beforehand-prepared base substrate are in contact with each other;
- a bonding step of bonding the base substrate and the Ir thin film after the mounting step;
- and
- a removing process of removing the dummy substrate after the bonding step.
Dependencies are inferred from the claim text.