# US 2025/0146121 A1 · Mask and method of manufacturing mask

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- Number: US 2025/0146121 A1
- Document ID: US20250146121A1
- Status: Published application
- Kind: A1
- Application number: 18/833,520
- Filed: 2023-01-31
- Published: 2025-05-08
- Earliest claimed: 2022-01-31
- Assignees: Dai Nippon Printing Co., Ltd.
- Applicants: Dai Nippon Printing Co., Ltd.
- Inventors: Yasuko SONE; Yutaka OZAWA; Masashi HIRABAYASHI
- Web page: https://patentgrep.com/patent/US20250146121A1

## CPC

- C23C 14/042: {using masks}
- C23C 14/04: Coating on selected surface areas, e.g. using masks
- C23C 14/12: Organic material
- C23C 16/042: {using masks}
- H05B 33/10: Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
- H10K 50/00: Organic light-emitting devices (integrated devices or assemblies of multiple devices H10K59/00, H10K65/00; organic semiconductor lasers H01S5/36)
- H10K 59/00: Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K 71/00: Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K 71/16: using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K 71/166: {using selective deposition, e.g. using a mask}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A mask includes a first layer that includes a first surface, a second surface that is located opposite the first surface, at least one first opening that extends from the first surface to the second surface, and a first wall surface that faces the first opening, a second layer that includes a third surface that faces the second surface, a fourth surface that is located opposite the third surface, and multiple second openings that extend from the third surface to the fourth surface and that overlap the first opening in plan view, and a first intermediate layer that is located between at least the second surface and the third surface. The first layer contains silicon. The second layer contains a resin material. The first wall surface includes multiple recessed portions that are arranged in a thickness direction of the first layer.

## Claims

### Claim 1

A mask comprising:
a first layer that includes a first surface, a second surface that is located opposite the first surface, at least one first opening that extends from the first surface to the second surface, and a first wall surface that faces the first opening;
a second layer that includes a third surface that faces the second surface, a fourth surface that is located opposite the third surface, and multiple second openings that extend from the third surface to the fourth surface and that overlap the first opening in plan view; and
a first intermediate layer that is located between at least the second surface and the third surface,
wherein the first layer contains silicon,
wherein the second layer contains a resin material, and
wherein the first wall surface includes multiple recessed portions that are arranged in a thickness direction of the first layer.

### Claim 2 (depends on 1)

The mask according to claim 1, wherein some of the multiple recessed portions close to the first surface are arranged in the thickness direction in a first period, and
wherein some of the multiple recessed portions close to the second surface are arranged in the thickness direction in a second period shorter than the first period.

### Claim 3 (depends on 1)

The mask according to claim 1, wherein some of the multiple recessed portions close to the first surface have a first depth, and
wherein some of the multiple recessed portions close to the second surface have a second depth less than the first depth.

### Claim 4 (depends on 1)

The mask according to claim 1, wherein the first intermediate layer includes a first intermediate wall surface that is located outside a contour of the first opening on the second surface.

### Claim 5 (depends on 1)

The mask according to claim 1, wherein the first intermediate layer includes a first intermediate layer that has a thickness of 1 μm or less.

### Claim 6 (depends on 1)

The mask according to claim 1, further comprising: a second intermediate layer that is located on the third surface of the second layer and that has a thickness of 1 μm or more.

### Claim 7 (depends on 1)

The mask according to claim 1, wherein the first layer includes a plurality of the first openings, an inner region that is located between the first openings adjacent to each other in plan view, and an outer region that is located between an outer edge of the first layer and the first openings in plan view.

### Claim 8 (depends on 7)

The mask according to claim 7, wherein a thickness of the inner region is less than a thickness of the outer region.

### Claim 9 (depends on 1)

The mask according to claim 1, wherein a thickness of the second layer is less than a thickness of the first layer, and
wherein a thickness of the first intermediate layer is less than a thickness of the second layer.

### Claim 10 (depends on 1)

The mask according to claim 1, wherein the first wall surface includes a tapered surface that extends outward as a position is nearer to the first surface.

### Claim 11 (depends on 1)

The mask according to claim 1, further comprising: a stress adjustment layer that is located on the first surface.

### Claim 12 (depends on 1)

The mask according to claim 1, wherein the second layer contains polyimide.

### Claim 13

A method of manufacturing a mask, comprising:
a step of preparing a multilayer body including a first layer that includes a first surface and a second surface that is located opposite the first surface, a second layer that includes a third surface that faces the second surface and a fourth surface that is located opposite the third surface, and a first intermediate layer that is located between the second surface and the third surface;
a step of partly forming a resist layer on the first surface;
a first processing step of forming a first opening in the first layer by etching the first layer from the first surface; and
a second processing step of forming multiple second openings in the second layer.

### Claim 14

A method of manufacturing a mask, comprising:
a step of preparing a first layer that includes a first surface and a second surface that is located opposite the first surface;
a step of partly forming a resist layer on the second surface;
a first processing step of forming a first opening in the first layer by etching the first layer from the second surface; and
a step of joining a second layer that includes a third surface that faces the second surface and a fourth surface that is located opposite the third surface to the first layer; and
a second processing step of forming multiple second openings in the second layer,
wherein the mask includes a first intermediate layer that is located between the second surface and the third surface.

### Claim 15 (depends on 13)

The method according to claim 13, wherein the first processing step includes a dry etching step and a protection coating formation step that are alternately repeated.

### Claim 16 (depends on 13)

The method according to claim 13, further comprising: a step of removing the resist layer before the second processing step after the first processing step.

### Claim 17 (depends on 13)

The method according to claim 13, further comprising: a step of removing the first intermediate layer that overlaps the first opening in plan view before the second processing step after the first processing step.

### Claim 18 (depends on 13)

The method according to claim 13, further comprising: a step of removing the first intermediate layer that overlaps the first opening in plan view after the second processing step.

### Claim 19 (depends on 1)

A method of manufacturing an organic device, comprising:
a step of forming an organic layer on a substrate by using a vapor deposition method in which the mask according to claim 1 is used.