Micro-electro-mechanical device having contact pads that are protected against humidity and manufacturing process thereof

A process for manufacturing a MEMS device, comprising:

• forming a plurality of conductive regions on a substrate of semiconductor material;
• forming a first structural layer of semiconductor material, the first structural layer having a first thickness;
• selectively removing the first structural layer, forming first connection portions on and in contact with at least some conductive regions;
• forming a second structural layer of semiconductor material on the first structural layer, the second structural layer having a second thickness and being in direct contact with the first connection portions;
• and
• selectively removing the second structural layer forming second connection portions,
• wherein selectively removing the first structural layer and the second structural layer comprises defining active regions in an active portion of the MEMS device, and
• the first connection portion has a greater thickness than the second connection portion.

A device, comprising:

• a MEMS device including:
• a substrate of semiconductor material;
• an insulating layer on the substrate;
• a contact region on the insulating layer;
• an insulation portion on the insulating layer;
• a shielding region on the insulating layer, and the shielding region is spaced outward from and extends around the contact region;
• a first connection structure on the insulating portion, the first connection structure includes an intermediate portion coupled to the shielding region;
• a second connection structure on contact region, the second connection structure includes a first portion coupled to the contact region and a second portion coupled to the first portion, and the first portion extends from the contact region to the second portion;
• a passivation layer extends between the intermediate portion of the first connection structure and the first portion of the second connection structure, the passivation layer separates the intermediate portion of the first connection structure form the first portion of the second connection structure, and the passivation layer is between the first portion of the second connection structure and the second portion of the second connection structure;
• a first conductive track coupled to the contact region;
• and
• a second conductive track coupled to the shielding region.