Polishing pad and process for preparing the same
AssigneeSK enpulse Co., Ltd.
InventorsYounghwan KIM, Jangwon SEO, Jongwook YOON, Eungi MIN, Taeil HONG, Suyoung MOON
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Abstract
The polishing pad according to an embodiment comprises a top-pad that is brought into contact with a wafer to perform polishing and a sub-pad that is located on one side of the top-pad, wherein the polishing rate at a distance of 95 mm from the center of the wafer in the polishing rate profile in a CMP process for a silicon oxide layer is greater than the polishing rate at a distance of 85 mm from the center of the wafer. As a result, the polishing rate and polishing flatness can be enhanced; in particular, the polishing rate profile characteristics of the polishing pad edge are excellent.
Claims20
A polishing pad, which comprises a top-pad that is brought into contact with a wafer to perform polishing and a sub-pad that is located on one side of the top-pad, wherein the following Relationship 1 is satisfied:
- R
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- R
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- R
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- R
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- in Relationship 1, RR85 is the polishing rate (Å/minute) at a distance of 85 mm from the center of the wafer in the polishing rate profile in a CMP process for a silicon oxide layer;
- and RR95 is the polishing rate (Å/minute) at a distance of 95 mm from the center of the wafer in the polishing rate profile in a CMP process for a silicon oxide layer.
A process for preparing a polishing pad, which comprises:
- (1) preparing a top-pad using a top-pad composition comprising a urethane-based prepolymer, a foaming agent, and a curing agent;
- (2) preparing a sub-pad comprising a nonwoven fabric layer and a suede layer;
- and
- (3) combining the top-pad and the sub-pad to prepare a polishing pad,
- wherein the polishing pad satisfies the following Relationship 1:
- R
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- R
- 8
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- 5
- <
- R
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- R
- 9
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- 5
- [
- Relationship
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- 1
- ]
- in Relationship 1, RR85 is the polishing rate (Å/minute) at a distance of 85 mm from the center of the wafer in the polishing rate profile in a CMP process for a silicon oxide layer;
- and RR95 is the polishing rate (Å/minute) at a distance of 95 mm from the center of the wafer in the polishing rate profile in a CMP process for a silicon oxide layer.
Dependencies are inferred from the claim text.