Method for forming resonant cavity light emitting elements and optical device using the same
AssigneeMicledi Microdisplays BV
InventorsSoeren STEUDEL, Giuseppe BUSCEMI
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AssigneeMicledi Microdisplays BV
InventorsSoeren STEUDEL, Giuseppe BUSCEMI
Estimating the term…
A method (100) is provided for forming resonant cavity light emitting elements. The method comprises a step (101) of forming a first structure comprising a first substrate, a stop layer, a light emitting epitaxial structure, a conductive oxide layer, and second a substrate dielectrically bonded to the conductive oxide layer. The method further comprises a step (102) of etching from the first substrate up to the stop layer. Additionally, the method comprises a step (103) of forming a plurality of light emitting mesa modules, each having a metal layer deposited on the stop layer. Furthermore, the method comprises a step (104) of hybrid bonding the first structure to a carrier substrate to form a second structure. Furthermore, the method comprises a step (105) of etching from the second substrate up to the conductive oxide layer. Moreover, the method comprises a step (106) of depositing a distributed Bragg reflector on top of the conductive oxide layer, thereby forming the resonant cavity light emitting elements.
-15. (canceled)
A method for forming resonant cavity light emitting elements, the method comprising:
The method of claim 1, wherein the conductive oxide layer is an optically transparent oxide layer.
The method of claim 1, wherein the metal layer comprises a titanium layer, an aluminum layer, or bilayers thereof.
The method of claim 1, wherein the metal layer contains a plurality of conductive layers comprising titanium based oxide layers, hafnium based oxide layers, or bilayers thereof.
The method of claim 1, wherein the metal layer comprises a plurality of dielectric layers and at least one metallic layer to form a hybrid optical reflector.
The method of claim 1, wherein the distributed Bragg reflector is a multi-layer oxide based reflector comprising tantalum based oxide layers, niobium based oxide layers, silicon based oxide layers, or bilayers thereof.
The method of claim 1, wherein the etching comprises a dry etching process, a chemical-mechanical planarization process, a combination thereof.
The method of claim 1, wherein the stop layer has a thickness less than about 20 nm.
An optical device comprising a plurality of resonant cavity light emitting elements, each of the plurality of resonant cavity light emitting elements comprising:
Dependencies are inferred from the claim text.