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US 2025/0142840 A1Published application
Semiconductor devices and hybrid transistors
AssigneeMicron Technology, Inc.
InventorsKamal M. Karda, Haitao Liu, Durai Vishak Nirmal Ramaswamy
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Abstract
Semiconductor devices are disclosed. A semiconductor device may include a hybrid transistor configured in a vertical orientation. The hybrid transistor may include a gate electrode, a drain material, a source material, and a channel material operatively coupled between the drain material and the source material. The source material and the drain material include a first material, and the channel material includes a second, different material.
Claims20
A semiconductor device, comprising:
- a transistor comprising:
- a channel region including a low bandgap high mobility material disposed between opposing portions of a high bandgap low mobility material;
- and
- drain and source regions disposed on opposing ends of the channel region.
1 more element
A semiconductor device, comprising:
- a transistor including:
- a gate electrode;
- a drain material;
- a source material;
- and
- a channel material operatively coupled between the drain material and the source material, wherein the channel material exhibits a tapered width from the source material to the drain material.
3 more elements
A semiconductor device, comprising:
- a transistor comprising:
- a gate electrode;
- a drain region including a drain material;
- a source region including a source material;
- and
- a channel region including a channel material operatively coupled between the drain material and the source material;
- and
- a conductive material coupled to one of the source material or the drain material, wherein the conductive material is arranged substantially perpendicular to at least one of the source material, the channel material, or the drain material.
5 more elements
Dependencies are inferred from the claim text.