Photoelectric conversion device and photodetection system having avalanche diode

A photoelectric conversion device comprising:

• a pixel including
• a photoelectric conversion unit including an avalanche diode that multiplies charge generated by an incident of photon by avalanche multiplication, and outputting a first signal in accordance with the incident of photon, and
• a signal processing circuit including a logic circuit that outputs a third signal to a counter in response to the first signal and a second signal,
• wherein the signal processing circuit includes a first element and a second element, wherein the first signal is input to the first element, and the second signal is input to the second element, and
• wherein a thickness of a gate insulating film of a transistor included in the first element is thicker than a thickness of a gate insulating film of a transistor included in the second element.

A photoelectric conversion device comprising:

• a pixel including
• a photoelectric conversion unit including an avalanche diode that multiplies charge generated by an incident of photon by avalanche multiplication, and outputting a first signal in accordance with the incident of photon, and
• a signal processing circuit including a logic circuit that outputs a third signal in response to the first signal and a second signal,
• wherein the signal processing circuit includes a first element connected to a cathode or an anode of the avalanche diode and having a first withstand voltage and a second element having a second withstand voltage lower than the first withstand voltage, wherein the first signal is input to the first element and the second signal is input to the second element.

A photoelectric conversion device comprising:

• a pixel including
• a photoelectric conversion unit including an avalanche diode that multiplies charge generated by an incident of photon by avalanche multiplication, and outputting a first signal in accordance with the incident of photon, and
• a signal processing circuit including a logic circuit that outputs a third signal in response to the first signal and a second signal,
• wherein the signal processing circuit includes a first element connected to a cathode or an anode of the avalanche diode and a second element, wherein the first signal is input to the first element and the second signal is input to the second element, and
• wherein a thickness of a gate insulating film of a transistor included in the first element is thicker than a thickness of a gate insulating film of a transistor included in the second element.

A photoelectric conversion device comprising:

• a pixel including
• a photoelectric conversion unit including an avalanche diode that multiplies charge generated by an incident of photon by avalanche multiplication, and outputting a first signal, which is an analog signal, in accordance with the incident of photon, and
• a waveform shaping circuit including a logic circuit outputting a third signal, that is a pulse signal, in response to the first signal and a second signal,
• wherein the waveform shaping circuit includes a first element having a first withstand voltage and a second element having a second withstand voltage lower than the first withstand voltage, wherein the first signal is input to the first element and the second signal is input to the second element.

A photoelectric conversion device comprising:

• a pixel including
• a photoelectric conversion unit including an avalanche diode that multiplies charge generated by an incident of photon by avalanche multiplication, and outputting a first signal, which is an analog signal, in accordance with the incident of photon, and
• a waveform shaping circuit including a logic circuit outputting a third signal, that is a pulse signal, in response to the first signal and a second signal,
• wherein the waveform shaping circuit includes a first element and a second element, wherein the first signal is input to the first element, and the second signal is input to the second element, and
• wherein a thickness of a gate insulating film of a transistor included in the first element is thicker than a thickness of a gate insulating film of a transistor included in the second element.