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US 2025/0141479 A1Published application
Device including power amplifier in wireless communication system
AssigneeSamsung Electronics Co., Ltd.
InventorsSungjae OH, Hyunuk KANG, Daeyoung LEE
Life of this patent
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Abstract
The disclosure relates to a fifth generation (5G) communication system or a sixth generation (6G) communication system. An electronic device in a wireless communication system can reduce or minimize the size of a power amplifier module (PAM) and can secure a relatively wide operating frequency band of the PAM.
Claims20
An electronic device in a wireless communication system, the electronic device comprising:
- a first transistor configured to receive a first signal, wherein the first transistor comprises a first capacitor, and wherein the first transistor is configured to amplify and output the first signal as a first radio frequency (RF) signal in case that the first signal is greater than or equal to a specified voltage;
- a second transistor configured to receive a second signal, wherein the second transistor comprises a second capacitor, and wherein the second transistor is configured to amplify and output the second signal as a second RF signal;
- a first connection line which is connected to the first transistor and in which the first RF signal is transmitted;
- a second connection line which is connected to the second transistor and in which the second RF signal is transmitted, wherein the first connection line and the second connection line are connected at a first node;
- a first inductor connected to the first node;
- and
- a third capacitor configured to connect the first inductor and ground,
- wherein a sum of impedances of the first inductor, the first capacitor, and the third capacitor is configured such that the first RF signal and the second RF signal resonate in a specified frequency band.
5 more elements
A power amplifier module (PAM) comprising:
- a first transistor configured to receive a first signal, wherein the first transistor comprises a first capacitor, and wherein the first transistor is configured to amplify and output the first signal as a first radio frequency (RF) signal in case that the first signal is greater than or equal to a specified voltage;
- a second transistor configured to receive a second signal, wherein the second transistor comprises a second capacitor, and wherein the second transistor is configured to amplify and output the second signal as a second RF signal;
- a first connection line which is connected to the first transistor and in which the first RF signal is transmitted;
- a second connection line which is connected to the second transistor and in which the second RF signal is transmitted, wherein the first connection line and the second connection line are connected at a first node;
- a first inductor connected to the first node;
- and
- a third capacitor configured to connect the first inductor and ground,
- wherein a sum of impedances of the first inductor, the first capacitor, and the third capacitor is configured such that the first RF signal and the second RF signal resonate in a specified frequency band.
5 more elements
Dependencies are inferred from the claim text.