Optical semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsAyumi FUCHIDA, Go SAKAINO
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AssigneeMitsubishi Electric Corporation
InventorsAyumi FUCHIDA, Go SAKAINO
Estimating the term…
Active portions (A) and passive portions (B) are alternately arranged along a first direction on a semiconductor substrate (1) of a first conductive type. An electrode (2) is provided on the active portion (A). The active portion (A) includes an active layer (4), a second conductive type cladding layer (5), and a second conductive type contact layer (6) that are stacked in order on the semiconductor substrate (1). The active portion (A) has a resonator structure sandwiched between a front end surface (8) and a rear end surface (9) in a second direction perpendicular to the first direction. The second conductive type contact layer (6) in the active portion (A) is in contact with the electrode (2). The passive portion (B) includes the second conductive type contact layer (6) and a first conductive type layer (7) provided on the second conductive type contact layer (6).
An optical semiconductor device comprising:
An optical semiconductor device comprising:
Dependencies are inferred from the claim text.