Low Temperature Deposition of Hydrogen-Free Diamond-Like Carbon Films
AssigneeIntel Corporation
InventorsIlya KARPOV, Tristan TRONIC, Arnab SEN GUPTA, I-Cheng TUNG, Jin WANG, Matthew METZ, Eric MATTSON
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AssigneeIntel Corporation
InventorsIlya KARPOV, Tristan TRONIC, Arnab SEN GUPTA, I-Cheng TUNG, Jin WANG, Matthew METZ, Eric MATTSON
Estimating the term…
The present disclosure is directed to a high-voltage magnetron sputtering tool with an enhanced power source including a vacuum chamber containing a magnetron cathode with a magnet array, a target, and an anode, as well as the enhanced power source that includes high-power DC power source and controller that produces a pulsed output. In an aspect, the enhanced power source may include a standard power source that is retrofitted a supplemental high-power DC power source and controller, and alternatively, a high-power DC power source and controller that replaces the standard power source. In addition, the present disclosure is directed to methods for depositing a hydrogen-free diamond-like carbon film on a semiconductor substrate using the high-voltage magnetron sputtering tool. In an aspect, the hydrogen-free diamond-like carbon film may be an etch mask having a sp3 carbon bonding that is greater than 60 percent.
A semiconductor tool comprising:
A method comprising:
An etch mask comprising:
Dependencies are inferred from the claim text.