US 2025/0132233 A1Published application

Heat-Electricity Discrete Power Module Including Two-Way Heat-Dissipation Ceramic Substrates and Manufacturing method of the Same

AssigneesICP Technology Co., Ltd., Sentec E&E Co., Ltd.

InventorsHO-CHIEH YU, CHEN-CHENG-LUNG LIAO, CHUN-YU LIN, JASON AN CHENG HUANG, Liang-Yo CHEN

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Abstract

Disclosed are a heat-electricity discrete power module with two-way heat-dissipation ceramic substrates and a manufacturing method of the same, including: two double-sided metal-clad ceramic substrates, a power transistor die, and an insulation sealant; each double-sided metal-clad ceramic substrate including a ceramic insulation layer, a three-dimensional conductive layer formed on the first ceramic insulation layer and facing the opposite three-dimensional conductive layer to constitute an electrical circuit, and a thermally-conductive metallic layer opposite and insulated from the three-dimensional conductive layer, respectively; electrodes of each power transistor die are electrically conductively connected to the three-dimensional conductive layer, and their upper and lower surfaces are thermally conductively connected to respective three-dimensional conductive layers; circuit components are additionally mounted on the three-dimensional conductive layers; at least one conductive post is formed between the circuits of respective three-dimensional conductive layers; the power transistor die and conductive post are completely encapsulated by the insulation sealant.

Claims8

Dependent claims

A heat-electricity discrete power module including two-way heat-dissipation ceramic substrates, comprising:

a first double-sided metal-clad ceramic substrate comprising a first ceramic insulation layer, a first three-dimensional conductive layer formed on the first ceramic insulation layer, and a first thermally-conductive metallic layer which is formed on the first ceramic insulation layer opposite the first three-dimensional conductive layer and insulated from the first three-dimensional conductive layer, wherein the first three-dimensional conductive layer is formed with a plurality of tires of different heights;
a second double-sided metal-clad ceramic substrate disposed parallel to the first double-sided metal-clad ceramic substrate, comprising a second ceramic insulation layer, a second three-dimensional conductive layer formed on the second ceramic insulation layer, and a second thermally-conductive metallic layer which is formed on the second ceramic insulation layer opposite the second three-dimensional conductive layer and insulated from the second three-dimensional conductive layer, wherein the second three-dimensional conductive layer is formed with a plurality of tiers of different heights;
and
at least one power transistor die, each of the at least one power transistor die being formed with a plurality of electrodes, each of the plurality of electrodes being electrically conductively connected to the first three-dimensional conductive layer or the second three-dimensional conductive layer, respectively, and an upper surface and a lower surface of the each of the at least one power transistor die being thermally conductively connected to the first three-dimensional conductive layer and the second three-dimensional conductive layer, respectively.

1 more element

A manufacturing method of a heat-electricity discrete power module including two-way heat-dissipation ceramic substrates, the heat-electricity discrete power module including two-way heat-dissipation ceramic substrates comprising a first double-sided metal-clad ceramic substrate and a second double-sided metal-clad ceramic substrate disposed parallel to the first double-sided metal-clad ceramic substrate, wherein the first double-sided metal-clad ceramic substrate comprises a first ceramic insulation layer, a first three-dimensional conductive layer formed on the first ceramic insulation layer, and a first thermally-conductive metallic layer which is formed on the first ceramic insulation layer opposite the first three-dimensional conductive layer and insulated from the first three-dimensional conductive layer;

and the second second double-sided metal-clad ceramic substrate comprises a second ceramic insulation layer, a second three-dimensional conductive layer formed on the second ceramic insulation layer, and a second thermally-conductive metallic layer which is formed on the second ceramic insulation layer opposite the second three-dimensional conductive layer and insulated from the second three-dimensional conductive layer;
the manufacturing method comprises:
forming a circuit on the first three-dimensional conductive layer, the first three-dimensional conductive layer being formed with a plurality of tiers of different heights;
mounting at least one power transistor die at the circuit of the first double-sided metal-clad ceramic substrate, so that the at least one power transistor die is thermally conductively connected to the first three-dimensional conductive layer;
thermally conductively bonding the second double-sided metal-clad ceramic substrate to the at least one power transistor die in a manner that the second three-dimensional conductive layer faces the at least one power transistor die;
and
potting an insulation sealant to completely encapsulate the at least one power transistor die.

4 more elements

Dependencies are inferred from the claim text.