Ternary content addressable memory and decision generation method for the same

A ternary content addressable memory (TCAM), comprising:

• a plurality of first search lines;
• a plurality of second search lines;
• a plurality of memory cell strings, each of the plurality of memory cell strings comprising a plurality of memory cells;
• and
• one or more current sensing units, coupled to the plurality of memory cell strings,
• wherein each of the plurality of memory cell strings comprises at least four transistors serially connected as a NAND memory string, and two transistors of the at least four transistors form each of the plurality of memory cells,
• wherein one, of the two transistors in each of the plurality of memory cells, coupled to one of the first search lines is a first transistor, and the other one, of the two transistors in each of the plurality of memory cells, coupled to one of the second search lines is a second transistor,
• wherein the plurality of first search lines are arranged consecutively, and the plurality of second search lines are arranged consecutively,
• wherein in a search operation, a determination that whether any of the data stored in the plurality of memory cell strings matches a data string to be searched is made according to whether the one or more current sensing units detect current from the plurality of memory cell strings, or according to the magnitude of the current flowing out from the plurality of memory cell strings detected by the one or more current sensing units.