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US 2025/0130490 A1Published application
Methods of repairing extreme ultraviolet photomasks
OwnerYing-Hui HSIEH, Boming HSU +2inventors
InventorsYing-Hui HSIEH, Boming HSU, Hsiang-Chien HSU, Chien-Hung LAI
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Abstract
A method for repairing a lithography mask is provided. The method includes receiving a lithography mask having a capping layer that includes a damaged region, identifying a location and a dimension of the damaged region of the capping layer, determining a repairing time duration based on the dimension of the damaged region of the capping layer, and forming a capping patch layer in the damaged region of the capping layer.
Claims20
A method for repairing a lithography mask, comprising:
- receiving a lithography mask having a capping layer, wherein the capping layer includes a damaged region;
- identifying a location and a dimension of the damaged region of the capping layer;
- determining a repairing time duration based on the dimension of the damaged region of the capping layer;
- and
- forming a capping patch layer in the damaged region of the capping layer.
2 more elements
A lithography mask, comprising:
- a substrate;
- a reflective multilayer stack over the substrate;
- a capping layer over the reflective multilayer stack;
- and
- a patterned absorber layer over the capping layer, the patterned absorber layer defining a reflective region of the lithography mask,
- wherein the capping layer comprises an amorphous portion located in the reflective region of the lithography mask and surrounded by a polycrystalline portion, the polycrystalline portion comprising a first ruthenium-containing material and the amorphous portion comprising a second ruthenium-containing material.
3 more elements
A lithography mask, comprising:
- a substrate;
- a reflective multilayer stack over the substrate;
- a capping layer over the reflective multilayer stack, the capping layer comprising a ruthenium-containing material;
- a capping patch layer surrounded by the capping layer, the capping patch layer comprising an amorphous ruthenium-containing material;
- and
- a patterned absorber layer over the capping layer, the patterned absorber layer defining a reflective region of the lithography mask,
- wherein the capping patch layer is in the reflective region of the lithography mask.
4 more elements
Dependencies are inferred from the claim text.