Sputtering of high-quality superconducting thin films

A method of forming a superconductive thin film comprising:

• providing a physical vapor deposition chamber having a vacuum chamber and a target material comprising a superconductor material selected from a group consisting of niobium, indium, aluminum, titanium, molybdenum, and the like disposed on a back plate near a top portion of the vacuum chamber and a chuck to support a substrate near a bottom portion of the vacuum chamber, a temperature of the chuck being in a range from 15° C. to 150° C.;
• injecting a working gas comprising krypton gas into the vacuum chamber;
• applying power settings to produce an electromagnetic field to induce electric currents inside the vacuum chamber, wherein the krypton gas is ionized into an inductively coupled plasma by the electric currents, and positive ions from the inductively coupled plasma are accelerated toward the target material to displace atoms from the target material;
• and
• waiting a predetermined time to deposit a thin film of the target material on the substrate to a desired thickness.