Heterogeneously integrated dfb laser with single lateral mode

A method of manufacturing a distributed feedback (DFB) laser, comprising:

• etching a grating on a III-V semiconductor structure, the III-V semiconductor structure comprising a laser active region configured to generate light, the grating being etched on a bonding surface of the III-V semiconductor structure to provide optical feedback to the laser active region to generate output light that is output from a first end of the active region and that is further output from a second end of the active region displaced from the first end in a longitudinal direction;
• and
• bonding the III-V semiconductor structure to a silicon structure, the silicon structure comprising a silicon waveguide configured to receive the output light from the first end of the laser active region, the III-V semiconductor structure bonded to the silicon structure such that the bonding surface is bonded to a surface of the silicon structure,
• the silicon structure further comprising:
• a DFB region comprising surfaces of the silicon structure defining at least two laterally separated silicon portions extending in the longitudinal direction and overlapping, with respect to a lamination direction perpendicular to the longitudinal direction, two lobes of a second lateral mode of the output light in the laser active region.