Raman spectroscopy based measurements in patterned structures
AssigneeNova Ltd.
InventorsGilad Barak, Yanir HAINICK, Yonatan OREN, Vladimir Machavariani
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AssigneeNova Ltd.
InventorsGilad Barak, Yanir HAINICK, Yonatan OREN, Vladimir Machavariani
Estimating the term…
A method for use in measuring one or more characteristics of patterned structures, the method including providing measured data comprising data indicative of at least one Raman spectrum obtained from a patterned structure under measurements using at least one selected optical measurement scheme each with a predetermined configuration of at least one of illuminating and collected light conditions corresponding to the one or more characteristics to be measured, processing the measured data, and determining, for each of the at least one Raman spectrum, a distribution of Raman-contribution efficiency (RCE) within at least a part of the structure under measurements, being dependent on characteristics of the structure and the predetermined configuration of the at least one of illuminating and collected light conditions in the respective optical measurement scheme, and analyzing the distribution of Raman-contribution efficiency and determining the one or more characteristics of the structure.
A system for use in measuring one or more characteristics of a patterned structure on semiconductor wafer, the system comprising:
A method for use in measuring one or more characteristics of a patterned structure, the method comprising:
A non-transitory computer readable medium for use in measuring one or more characteristics of a patterned structure, the non-transitory computer readable medium stores instructions for:
Dependencies are inferred from the claim text.