Thin film structure and method of manufacturing the thin film structure

A method of manufacturing a thin film structure, the method comprising:

• forming a first buffer layer;
• forming a transition metal layer on the first buffer layer;
• forming a second buffer layer on the transition metal layer;
• forming a plurality of grain boundaries by crystallizing the first buffer layer and the second buffer layer, and forming a transition metal oxide layer from the transition metal layer;
• and
• synthesizing a transition metal dichalcogenide layer by replacing oxygen in the transition metal oxide layer with a chalcogen element.

A semiconductor device comprising:

• a first gate electrode;
• a first buffer layer on the first gate electrode;
• a channel layer on the first buffer layer and including a transition metal dichalcogenide;
• a source electrode and a drain electrode below the channel layer;
• a second buffer layer on the channel layer;
• and
• a second gate electrode on the second buffer layer,
• wherein the second buffer layer includes a same chalcogen element as a chalcogen element included in the channel layer.