Semiconductor arrangement comprising a semiconductor element with at least one connection element
AssigneeSiemens Aktiengesellschaft
InventorsAlexander Hensel, STEFAN STEGMEIER, CLAUS FLORIAN WAGNER, MICHAEL WOITON
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Abstract
A semiconductor arrangement includes a semiconductor element having a connection element, and a metallic contacting element connected flatly to the connection element of the semiconductor element by being sprayed onto the semiconductor element via a thermal spraying method involving atmospheric plasma spraying. The metallic contacting element incudes first and second particles which form a textured layer, with the first particles deformed in a planar-like manner and with the second particles being melted second particles, said first particles being at least five times larger than the second particles.
Claims21
-16. (canceled)
A semiconductor arrangement, comprising:
- a semiconductor element including a connection element;
- and
- a metallic contacting element connected flatly to the connection element of the semiconductor element by being sprayed onto the semiconductor element via a thermal spraying method involving atmospheric plasma spraying, said metallic contacting element comprising first and second particles which form a textured layer, with the first particles deformed in a planar-like manner and with the second particles being melted second particles, said first particles being at least five times larger than the second particles.
A power converter, comprising a semiconductor arrangement, said semiconductor arrangement comprising a semiconductor element including a connection element, and a metallic contacting element connected over its surface area to the connection element of the semiconductor element by being sprayed onto the semiconductor element via a thermal spraying method involving atmospheric plasma spraying, said metallic contacting element comprising first and second particles which form a textured layer, with the first particles deformed in a planar-like manner and with the second particles being melted second particles, said first particles being at least five times larger than the second particles.
A method for the production of producing a semiconductor arrangement, the method comprising:
- forming a textured layer of a metallic contacting element for connection of the metallic contacting element flatly upon a connection element of a semiconductor element by spraying first and second particles via a thermal spraying method onto the semiconductor element, with the first particles being at least five times larger than the second particles,
- wherein the textured layer is formed by deformation of the first particles and melting of the second particles, and
- wherein atmospheric plasma spraying is used as the thermal spraying method.
Dependencies are inferred from the claim text.