Devices, systems, and methods including micro- or nano- cantilever structures
AssigneesThe MITRE Corporation, Massachusetts Institute of Technology
InventorsHenry WEN, Andrew Greenspon, Matthew Saha, Dirk Englund
Life of this patent
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Abstract
A cantilever may include a first dielectric layer that has a first intrinsic stress and a second dielectric layer overlying the first dielectric layer that has a second intrinsic stress that is different than the first intrinsic stress. The difference between the first and second intrinsic stresses may cause the cantilever to curve. A second dielectric layer can comprise a plurality of crossbars oriented at an angle relative to a length of the cantilever to reduce curvature in a width direction of the cantilever. The second dielectric layer can be patterned with a waveguide. The cantilever may be piezoelectrically actuated.
Claims46
A cantilever comprising:
- a first dielectric layer, wherein the first dielectric layer has a first intrinsic stress;
- a second dielectric layer overlying the first dielectric layer, wherein the second dielectric layer has a second intrinsic stress that is different than the first intrinsic stress,
- wherein the cantilever is curved along a longitudinal dimension of the cantilever due to a difference between the first and second intrinsic stresses, and
- wherein the second dielectric layer comprises a plurality of crossbars oriented at an angle relative to a length of the cantilever to control curvature in a lateral dimension of the cantilever.
A photonic system comprising:
- a photonic integrated circuit (PIC) chip comprising a cantilever, the cantilever comprising:
- a first dielectric layer, wherein the first dielectric layer has a first intrinsic stress;
- a second dielectric layer overlying the first dielectric layer, wherein the second dielectric layer has a second intrinsic stress that is different than the first intrinsic stress;
- and
- a waveguide patterned in the second dielectric layer;
- wherein the cantilever is curved along a longitudinal dimension of the cantilever due to a difference between the first and second intrinsic stresses, and
- wherein the second dielectric layer comprises a plurality of crossbars oriented at an angle relative to the longitudinal dimension of the cantilever to control curvature in a lateral dimension of the cantilever.
A system comprising:
- a substrate;
- a first cantilever anchored to the substrate at one end, wherein the first cantilever forms an arch along its length over the substrate;
- and
- a second cantilever anchored to the first cantilever at one end and comprising:
- a first dielectric layer, wherein the first dielectric layer has a first intrinsic stress;
- a second dielectric layer overlying the first dielectric layer, wherein the second dielectric layer has a second intrinsic stress that is different than the first intrinsic stress,
- wherein the second cantilever is curved along a longitudinal dimension of the second cantilever due to a difference between the first and second intrinsic stresses, and
- wherein the second dielectric layer comprises a plurality of crossbars oriented at an angle relative to the longitudinal dimension of the second cantilever to control curvature in a lateral dimension of the cantilever.
A cantilever comprising:
- a first dielectric layer, wherein the first dielectric layer has a first intrinsic stress;
- a second dielectric layer overlying the first dielectric layer, second dielectric layer has a second intrinsic stress that is different than the first intrinsic stress, wherein a difference between the first and second intrinsic stresses causes the cantilever to curve.
A cantilever comprising:
- a first dielectric layer, wherein the first dielectric layer has a first intrinsic stress;
- a second dielectric layer overlying the first dielectric layer, wherein the second dielectric layer has a second intrinsic stress that is different than the first intrinsic stress,
- a first piezoelectric layer disposed between the first dielectric layer and the second dielectric layer in a first longitudinal half of the cantilever;
- and
- a second piezoelectric layer disposed between the first dielectric layer and the second dielectric layer in a second longitudinal half of the cantilever.
A cantilever comprising:
- a first dielectric layer, wherein the first dielectric layer has a first intrinsic stress;
- a second dielectric layer overlying the first dielectric layer, wherein the second dielectric layer has a second intrinsic stress that is different than the first intrinsic stress,
- a first piezoelectric layer disposed between the first dielectric layer and the second dielectric layer in a first lateral portion of the cantilever;
- and
- a second piezoelectric layer disposed between the first dielectric layer and the second dielectric layer in a second lateral portion of the cantilever.
Dependencies are inferred from the claim text.