Van der waals quantum dots
AssigneeThe Regents of the University of Michigan
InventorsZetian Mi, Yuanpeng Wu, Yixin Xiao
Life of this patent
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Abstract
A device includes a substrate and a heterostructure supported by the substrate. The heterostructure includes a set of quantum dot structures, each quantum dot structure of the set of quantum dot structures including a semiconductor material, and a layered material disposed between the set of quantum dot structures and the substrate. The layered material includes a plurality of monolayers such that adjacent monolayers of the plurality of monolayers are bonded to one another via van der Waals forces, and the semiconductor material of each quantum dot structure of the set of quantum dot structures exhibits bonding via van der Waals forces.
Claims26
A device comprising:
- a substrate;
- and
- a heterostructure supported by the substrate, the heterostructure comprising:
- a set of quantum dot structures, each quantum dot structure of the set of quantum dot structures comprising a semiconductor material;
- and
- a layered material disposed between the set of quantum dot structures and the substrate;
- wherein the layered material comprises a plurality of monolayers such that
- adjacent monolayers of the plurality of monolayers are bonded to one another via van der Waals forces, and
- the semiconductor material of each quantum dot structure of the set of quantum dot structures exhibits bonding with the layered material via van der Waals forces.
A method of fabricating a quantum dot device, the method comprising:
- forming a layered material, the layered material comprising a plurality of monolayers supported by a substrate, with adjacent monolayers of the plurality of monolayers being bonded to one another via van der Waals forces;
- and
- growing epitaxially a set of quantum dot structures, each quantum dot structure of the set of quantum dot structures comprising a semiconductor material;
- wherein growing the set of quantum dot structures is implemented after forming the layered material such that
- the layered material is disposed between the set of quantum dot structures and the substrate, and
- the semiconductor material of each quantum dot structure of the set of quantum dot structures exhibits bonding with the layered material via van der Waals forces.
A device comprising:
- a substrate;
- and
- a heterostructure supported by the substrate, the heterostructure comprising:
- a set of nanocrystals, each nanocrystal of the set of nanocrystals comprising a semiconductor material;
- and
- a layered material disposed between the set of nanocrystals and the substrate;
- wherein the layered material comprises a plurality of monolayers such that
- adjacent monolayers of the plurality of monolayers are bonded to one another via van der Waals forces, and
- the semiconductor material of each nanocrystal of the set of nanocrystals exhibits bonding with the layered material via van der Waals forces.
A method of fabricating a device, the method comprising:
- forming a layered material, the layered material comprising a plurality of monolayers supported by a substrate, with adjacent monolayers of the plurality of monolayers being bonded to one another via van der Waals forces;
- and
- growing epitaxially a set of nanocrystals, each nanocrystal of the set of nanocrystals comprising a semiconductor material;
- wherein growing the set of nanocrystals is implemented after forming the layered material such that
- the layered material is disposed between the set of nanocrystals and the substrate, and
- the semiconductor material of each nanocrystal of the set of nanocrystals exhibits bonding with the layered material via van der Waals forces.
A device comprising:
- a substrate;
- and
- a set of quantum dot structures supported by the substrate, each quantum dot structure of the set of quantum dot structures comprising a semiconductor material;
- wherein the semiconductor material of each quantum dot structure of the set of quantum dot structures exhibits bonding with the substrate via van der Waals forces.
Dependencies are inferred from the claim text.