LOW ENERGY TREATMENT TO PASSIVATE SiC SUBSTRATE DEFECTS
AssigneeApplied Materials, Inc.
InventorsVikram M. BHOSLE, Hans-Joachim L. GOSSMANN, Stephen E. KRAUSE, Deven Raj MITTAL, Hiroyuki ITO
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Abstract
Disclosed herein are methods for passivating SiC substrate defects using a low-energy treatment. In some embodiments, a method may include providing a silicon carbide (SIC) substrate, treating the SiC substrate using an ion implant or a plasma doping process, forming a first epitaxial layer over an upper surface of the SiC substrate after the SiC substrate is treated, and forming a second epitaxial layer over the first epitaxial layer.
Claims20
A method, comprising:
- providing a silicon carbide (SiC) substrate;
- treating the SiC substrate using an ion implant or a plasma doping process;
- forming a first epitaxial layer over an upper surface of the SiC substrate after the SiC substrate is treated;
- and
- forming a second epitaxial layer over the first epitaxial layer.
A method of forming a silicon carbide (SiC) device, the method comprising:
- providing a SiC substrate;
- treating the SiC substrate using an ion implant or a plasma doping process;
- epitaxially forming a n layer over an upper surface of the SiC substrate after the SiC substrate is treated;
- and
- epitaxially forming a p+ layer over the n layer.
A system for forming a silicon carbide (SiC) device, the system comprising:
- a first processing chamber comprising at least one of:
- an ion implanter operable to treat a SiC substrate by performing an ion implant, and a plasma doping tool operable to treat the SiC substrate by performing a plasma doping process;
- and
- a second processing chamber operable to:
- epitaxially form a n layer over an upper surface of the SiC substrate after the SiC substrate is treated;
- and
- epitaxially form a p+ layer over the n− layer.
Dependencies are inferred from the claim text.